Atomic Defect Induced Saturable Absorption of Hexagonal Boron Nitride in Near Infrared Band for Ultrafast Lasing Applications.

Cheng, Chen; Li, Ziqi; Dong, Ningning; Li, Rang; Wang, Jun; Chen, Feng.

Afiliação

Cheng C; Shandong Provincial Key Laboratory of Optics and Photonic Devices, School of Physics and Electronics, Shandong Normal University, Jinan 250014, China.
Li Z; State Key Laboratory of Crystal Materials, School of Physics, Shandong University, Jinan 250100, China.
Dong N; Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China.
Li R; State Key Laboratory of Crystal Materials, School of Physics, Shandong University, Jinan 250100, China.
Wang J; Key Laboratory of Materials for High-Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China.
Chen F; State Key Laboratory of Crystal Materials, School of Physics, Shandong University, Jinan 250100, China.

Nanomaterials (Basel) ; 11(12)2021 Nov 26.

Article em En | MEDLINE | ID: mdl-34947552