Photoinduced Multi-Bit Nonvolatile Memory Based on a van der Waals Heterostructure with a 2D-Perovskite Floating Gate.

Lai, Haojie; Zhou, Yang; Zhou, Huabin; Zhang, Ning; Ding, Xidong; Liu, Pengyi; Wang, Xiaomu; Xie, Weiguang.

Afiliação

Lai H; Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong, 510632, China.
Zhou Y; Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong, 510632, China.
Zhou H; Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong, 510632, China.
Zhang N; Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong, 510632, China.
Ding X; School of Physics, Sun Yat-sen University, Guangzhou, Guangdong, 510275, China.
Liu P; Siyuan Laboratory, Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong, 510632, China.
Wang X; Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Jinan University, Guangzhou, Guangdong, 510632, China.
Xie W; School of Electronic Science and Technology, Nanjing University, Nanjing, Jiangsu, 210093, China.

Adv Mater ; 34(19): e2110278, 2022 May.

Article em En | MEDLINE | ID: mdl-35289451