Your browser doesn't support javascript.
loading
Artificial Vision Adaption Mimicked by an Optoelectrical In2O3 Transistor Array.
Jin, Chenxing; Liu, Wanrong; Xu, Yunchao; Huang, Yulong; Nie, Yiling; Shi, Xiaofang; Zhang, Gengming; He, Pei; Zhang, Jian; Cao, Hongtao; Sun, Jia; Yang, Junliang.
Afiliação
  • Jin C; Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
  • Liu W; Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
  • Xu Y; Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
  • Huang Y; Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
  • Nie Y; Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
  • Shi X; Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
  • Zhang G; Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
  • He P; Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
  • Zhang J; Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
  • Cao H; Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
  • Sun J; Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
  • Yang J; Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China.
Nano Lett ; 22(8): 3372-3379, 2022 04 27.
Article em En | MEDLINE | ID: mdl-35343229
ABSTRACT
Simulation of biological visual perception has gained considerable attention. In this paper, an optoelectrical In2O3 transistor array with a negative photoconductivity behavior is designed using a side-gate structure and a screen-printed ion-gel as the gate insulator. This paper is the first to observe a negative photoconductivity in electrolyte-gated oxide devices. Furthermore, an artificial visual perception system capable of self-adapting to environmental lightness is mimicked using the proposed device array. The transistor device array shows a self-adaptive behavior of light under different levels of light intensity, successfully demonstrating the visual adaption with an adjustable threshold range to the external environment. This study provides a new way to create an environmentally adaptive artificial visual perception system and has far-reaching significance for the future of neuromorphic electronics.
Assuntos
Palavras-chave

Texto completo: 1 Base de dados: MEDLINE Assunto principal: Eletrólitos / Eletrônica Idioma: En Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Assunto principal: Eletrólitos / Eletrônica Idioma: En Ano de publicação: 2022 Tipo de documento: Article