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Fluorine-Assisted Low-Temperature Synthesis of GaN:ZnO-Related Solid Solutions with Visible-Light Photoresponse.
Miyoshi, Akinobu; Yasuda, Shuhei; Kanazawa, Tomoki; Haruki, Rie; Yanagisawa, Keiichi; Tang, Ya; Mizuochi, Ryusuke; Yokoi, Toshiyuki; Nozawa, Shunsuke; Kimoto, Koji; Maeda, Kazuhiko.
Afiliação
  • Miyoshi A; Department of Chemistry, School of Science, Tokyo Institute of Technology, 2-12-1-NE-2 Ookayama, Meguro-ku, Tokyo 152-8550, Japan.
  • Yasuda S; Japan Society for the Promotion of Science, Kojimachi Business Center Building, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083, Japan.
  • Kanazawa T; Nanospace Catalysis Unit, Institute of Innovative Research, Tokyo Institute of Technology, Yokohama 226-8503, Japan.
  • Haruki R; Institute of Materials Structure Science, High Energy Accelerator Research Organization, Tsukuba, Ibaraki 305-0801, Japan.
  • Yanagisawa K; Institute of Materials Structure Science, High Energy Accelerator Research Organization, Tsukuba, Ibaraki 305-0801, Japan.
  • Tang Y; Research Center for Advanced Measurement and Characterization, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
  • Mizuochi R; Department of Chemistry, School of Science, Tokyo Institute of Technology, 2-12-1-NE-2 Ookayama, Meguro-ku, Tokyo 152-8550, Japan.
  • Yokoi T; Department of Chemistry, School of Science, Tokyo Institute of Technology, 2-12-1-NE-2 Ookayama, Meguro-ku, Tokyo 152-8550, Japan.
  • Nozawa S; Nanospace Catalysis Unit, Institute of Innovative Research, Tokyo Institute of Technology, Yokohama 226-8503, Japan.
  • Kimoto K; Institute of Materials Structure Science, High Energy Accelerator Research Organization, Tsukuba, Ibaraki 305-0801, Japan.
  • Maeda K; Research Center for Advanced Measurement and Characterization, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
ACS Appl Mater Interfaces ; 14(17): 19756-19765, 2022 May 04.
Article em En | MEDLINE | ID: mdl-35451831
ABSTRACT
Wurtzite-structured Ga1-xZnx(N,O,F) was successfully synthesized by nitridation of mixtures of a Ga-containing oxide and ZnF2. The addition of ZnF2 lowered the nitridation temperature for the synthesis of Ga1-xZnx(N,O,F) to 823 K, even when bulk ZnGa2O4 was used as a paired precursor. This lowering of the synthesis temperature was ascribed to the enhancement of nitridation through the addition of fluorine. The low-temperature nitridation achieved by the addition of fluorine suppressed the volatilization of Zn compared with that during the synthesis of a GaNZnO solid solution by a conventional high-temperature ammonolysis reaction. The higher concentration of Zn, as well as the higher N concentration in Ga1-xZnx(N,O,F) achieved through the fluorine-assisted nitridation, led to a redshift of the absorption edge of Ga1-xZnx(N,O,F) to 560 nm compared with that of GaNZnO synthesized by the conventional ammonolysis reaction. The visible-light absorption of Ga1-xZnx(N,O,F) can be used to drive the photoelectrochemical oxidation of water.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article