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Thermal effect of annealing-temperature on solution-processed high-k ZrO2 dielectrics.
Zhou, Shangxiong; Zhang, Jianhua; Fang, Zhiqiang; Ning, Honglong; Cai, Wei; Zhu, Zhennan; Liang, Zhihao; Yao, Rihui; Guo, Dong; Peng, Junbiao.
Afiliação
  • Zhou S; Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology Guangzhou 510640 China ninghl@scut.edu.cn yaorihui@scut.edu.cn psjbpeng@scut.edu.cn.
  • Zhang J; Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University Shanghai 200072 China.
  • Fang Z; State Key Laboratory of Pulp and Paper Engineering South China University of Technology Guangzhou 510640 China.
  • Ning H; Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology Guangzhou 510640 China ninghl@scut.edu.cn yaorihui@scut.edu.cn psjbpeng@scut.edu.cn.
  • Cai W; Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology Guangzhou 510640 China ninghl@scut.edu.cn yaorihui@scut.edu.cn psjbpeng@scut.edu.cn.
  • Zhu Z; Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology Guangzhou 510640 China ninghl@scut.edu.cn yaorihui@scut.edu.cn psjbpeng@scut.edu.cn.
  • Liang Z; Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology Guangzhou 510640 China ninghl@scut.edu.cn yaorihui@scut.edu.cn psjbpeng@scut.edu.cn.
  • Yao R; Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology Guangzhou 510640 China ninghl@scut.edu.cn yaorihui@scut.edu.cn psjbpeng@scut.edu.cn.
  • Guo D; School of Materials Science and Engineering, Beihang University Beijing 100191 China.
  • Peng J; Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology Guangzhou 510640 China ninghl@scut.edu.cn yaorihui@scut.edu.cn psjbpeng@scut.edu.cn.
RSC Adv ; 9(72): 42415-42422, 2019 Dec 18.
Article em En | MEDLINE | ID: mdl-35542877
ABSTRACT
In this paper, a solution-processed zirconium oxide (ZrO2) dielectric was deposited by spin coating with varying pre-annealing temperatures and post-annealing temperatures. The thermal effect of the pre-annealing and post-annealing process on the structural and electrical properties of ZrO2 films was investigated. The result shows that the pre-annealing process had a significant impact on the relative porosity and internal stress of ZrO2 film. A pre-annealing process with a low temperature could not effectively remove the residual solvent, while a high pre-annealing temperature would lead to large internal stress. As for post-annealing temperature, it was found that the post-annealing process can not only reduce internal defects of the ZrO2 dielectric, but also optimize the interface between the semiconductor and dielectric by lowering the surface defects of the ZrO2 film. Finally, the TFT with a pre-annealing temperature of 200 °C and post-annealing temperature of 400 °C showed optimized performance, with a mobility of 16.34 cm2 (V s)-1, an I on/I off of 2.08 × 106, and a subthreshold swing (SS) of 0.17 V dec-1.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article
Texto completo
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2019 Tipo de documento: Article