Highly-packed self-assembled graphene oxide film-integrated resistive random-access memory on a silicon substrate for neuromorphic application.

Choi, Hyun-Seok; Lee, Jihye; Kim, Boram; Lee, Jaehong; Park, Byung-Gook; Kim, Yoon; Hong, Suck Won.

Afiliação

Choi HS; Department of Electrical and Computer Engineering, University of Seoul, Seoul 02504, Republic of Korea.
Lee J; Department of Cogno-Mechatronics Engineering, Pusan National University, Busan, 46241, Republic of Korea.
Kim B; Department of Electrical and Computer Engineering, University of Seoul, Seoul 02504, Republic of Korea.
Lee J; Samsung Electronics Company, Ltd, Hwasung 18448, Republic of Korea.
Park BG; Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea.
Kim Y; Department of Electrical and Computer Engineering, University of Seoul, Seoul 02504, Republic of Korea.
Hong SW; Department of Cogno-Mechatronics Engineering, Pusan National University, Busan, 46241, Republic of Korea.

Nanotechnology ; 33(43)2022 Aug 01.

Article em En | MEDLINE | ID: mdl-35820398