Enhanced performance of p-type SnO<i><sub>x</sub></i>thin film transistors through defect compensation.

Enhanced performance of p-type SnO_xthin film transistors through defect compensation.

Zhang, Wei; Hong, Ruohao; Qin, Wenjing; Lv, Yawei; Ma, Jianmin; Liao, Lei; Li, Kenli; Jiang, Changzhong.

Afiliação

Zhang W; School of Physics and Electronics, Hunan Normal University, Changsha 410081, People's Republic of China.
Hong R; School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China.
Qin W; School of Physics and Electronics, Hunan Normal University, Changsha 410081, People's Republic of China.
Lv Y; School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China.
Ma J; School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China.
Liao L; School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China.
Li K; School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China.
Jiang C; College of Information Science and Engineering, National Supercomputing Center in Changsha, Hunan University, Changsha 410082, People's Republic of China.

J Phys Condens Matter ; 34(40)2022 Aug 03.

Article em En | MEDLINE | ID: mdl-35882217