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High Quality Factors in Superlattice Ferroelectric Hf0.5Zr0.5O2 Nanoelectromechanical Resonators.
Zheng, Xu-Qian; Tharpe, Troy; Enamul Hoque Yousuf, S M; Rudawski, Nicholas G; Feng, Philip X-L; Tabrizian, Roozbeh.
Afiliação
  • Zheng XQ; Department of Electrical and Computer Engineering, Herbert Wertheim College of Engineering, University of Florida, Gainesville, Florida 32611, United States.
  • Tharpe T; Department of Electrical and Computer Engineering, Herbert Wertheim College of Engineering, University of Florida, Gainesville, Florida 32611, United States.
  • Enamul Hoque Yousuf SM; Department of Electrical and Computer Engineering, Herbert Wertheim College of Engineering, University of Florida, Gainesville, Florida 32611, United States.
  • Rudawski NG; Research Service Centers, Herbert Wertheim College of Engineering, University of Florida, Gainesville, Florida 32611, United States.
  • Feng PX; Department of Electrical and Computer Engineering, Herbert Wertheim College of Engineering, University of Florida, Gainesville, Florida 32611, United States.
  • Tabrizian R; Department of Electrical and Computer Engineering, Herbert Wertheim College of Engineering, University of Florida, Gainesville, Florida 32611, United States.
ACS Appl Mater Interfaces ; 14(32): 36807-36814, 2022 Aug 17.
Article em En | MEDLINE | ID: mdl-35920004
ABSTRACT
The discovery of ferroelectricity and advances in creating polar structures in atomic-layered hafnia-zirconia (HfxZr1-xO2) films spur the exploration of using the material for novel integrated nanoelectromechanical systems (NEMS). Despite its popularity, the approach to achieving high quality factors (Qs) in resonant NEMS made of HfxZr1-xO2 thin films remains unexplored. In this work, we investigate the realization of high Qs in Hf0.5Zr0.5O2 nanoelectromechanical resonators by stress engineering via the incorporation of alumina (Al2O3) interlayers. We fabricate nanoelectromechanical resonators out of the Hf0.5Zr0.5O2-Al2O3 superlattices, from which we measure Qs up to 171,000 and frequency-quality factor products (f × Q) of >1011 Hz through electrical excitation and optical detection schemes at room temperature in vacuum. The analysis suggests that clamping loss and surface loss are the limiting dissipation sources and f × Q > 1012 Hz is achievable through further engineering of anchor structure and built-in stress.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article