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Photodetection and Infrared Imaging Based on Cd3As2 Epitaxial Vertical Heterostructures.
Yang, Yunkun; Zhou, Junchen; Xie, Xiaoyi; Zhang, Xingchao; Li, Zihan; Liu, Shanshan; Ai, Linfeng; Ma, Qiang; Leng, Pengliang; Zhao, Minhao; Wang, Jun; Shi, Yi; Xiu, Faxian.
Afiliação
  • Yang Y; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
  • Zhou J; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
  • Xie X; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
  • Zhang X; School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China.
  • Li Z; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
  • Liu S; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
  • Ai L; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
  • Ma Q; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
  • Leng P; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
  • Zhao M; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
  • Wang J; School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China.
  • Shi Y; National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
  • Xiu F; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China.
ACS Nano ; 16(8): 12244-12252, 2022 Aug 23.
Article em En | MEDLINE | ID: mdl-35929766
ABSTRACT
Due to the nontrivial electronic structure, Cd3As2 is predicted to possess various transport properties and outstanding photoresponses. Photodetectors based on topological materials are mostly made up of nanoplates, yet monolithic in situ heteroepitaxial Cd3As2 photodetectors are rarely reported to date owing to the crystal mismatch between Cd3As2 and semiconductors. Here, we demonstrate Cd3As2/ZnxCd1-xTe/GaSb vertical heteroepitaxial photodetectors via molecule beam epitaxy. By constructing dual-Schottky junctions, these photodetectors show high responsivity and external quantum efficiency in a broadband spectrum. Based on the strong and fast photoresponse, we achieved visible light to near-infrared imaging using a one-pixel imaging system with a galvo. Our results illustrate that the integration of three-dimensional Dirac semimetal Cd3As2 with semiconductors has potential applications in broadband photodetection and infrared cameras.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article
Texto completo
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XML
PubMed Links
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article