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γ-ray Radiation Hardness of CsPbBr3 Single Crystals and Single-Carrier Devices.
Gao, Lei; Sun, Jia-Lin; Li, Qiang; Yan, Qingfeng.
Afiliação
  • Gao L; Department of Chemistry, Tsinghua University, Beijing 100084, China.
  • Sun JL; Department of Physics, Tsinghua University, Beijing 100084, China.
  • Li Q; Department of Chemistry, Tsinghua University, Beijing 100084, China.
  • Yan Q; Department of Chemistry, Tsinghua University, Beijing 100084, China.
ACS Appl Mater Interfaces ; 14(33): 37904-37915, 2022 Aug 24.
Article em En | MEDLINE | ID: mdl-35943406
ABSTRACT
The superior environmental stability of all-inorganic metal halide perovskites compared to their organic-inorganic counterparts makes them more promising in practical applications. Here, the stability of an archetypical all-inorganic CsPbBr3 single crystal and its single-carrier devices under 60Co γ-ray irradiation was investigated. The CsPbBr3 single crystal itself shows ostensible hardness as its structural and optical properties present imperceptible changes even with a total ionizing dose of 800 krad. Unexpectedly, the single crystal-based single-carrier devices exhibit apparent dose-dependent hardness. The performance of the hole-only device suffers from more deterioration than the electron-only device under high irradiation doses (>400 krad). Our results reveal that such a discrepancy originates from the different influences of γ-ray irradiation-induced defects on the transport behaviors of holes and electrons in CsPbBr3 single-crystal devices. These findings offer a new understanding of the interaction mechanism between γ-photons and all-inorganic metal halide perovskite-based devices.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article