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Bias dependent variability of low-frequency noise in single-layer graphene FETs.
Mavredakis, Nikolaos; Cortadella, Ramon Garcia; Illa, Xavi; Schaefer, Nathan; Calia, Andrea Bonaccini; Garrido, Jose A; Jiménez, David.
Afiliação
  • Mavredakis N; Departament d'Enginyeria Electrònica, Escola d'Enginyeria, Universitat Autònoma de Barcelona Bellaterra 08193 Spain nikolaos.mavredakis@uab.es.
  • Cortadella RG; Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, Barcelona Institute of Science and Technology Campus UAB, Bellaterra Barcelona Spain.
  • Illa X; Instituto de Microelectronica de Barcelona, IMB-CNM (CSIC) Esfera UAB, Bellatera Spain.
  • Schaefer N; Centro de Investigacion Biomedica en Red en Bioingenieria, Biomateriales y Nanomedicina (CIBER-BBN) Madrid Spain.
  • Calia AB; Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, Barcelona Institute of Science and Technology Campus UAB, Bellaterra Barcelona Spain.
  • Anton-Guimerà-Brunet; Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, Barcelona Institute of Science and Technology Campus UAB, Bellaterra Barcelona Spain.
  • Garrido JA; Instituto de Microelectronica de Barcelona, IMB-CNM (CSIC) Esfera UAB, Bellatera Spain.
  • Jiménez D; Centro de Investigacion Biomedica en Red en Bioingenieria, Biomateriales y Nanomedicina (CIBER-BBN) Madrid Spain.
Nanoscale Adv ; 2(11): 5450-5460, 2020 Nov 11.
Article em En | MEDLINE | ID: mdl-36132035

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article