Correction: Chen et al. New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device. <i>Materials</i> 2022, <i>15</i>, 3640.

Chen, Yi-Yueh; Lin, Su-Jien; Chang, Shou-Yi

Correction: Chen et al. New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device. Materials 2022, 15, 3640.

Chen, Yi-Yueh; Lin, Su-Jien; Chang, Shou-Yi.

Afiliação

Chen YY; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
Lin SJ; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
Chang SY; Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.

Materials (Basel) ; 15(19)2022 Sep 28.

Article em En | MEDLINE | ID: mdl-36234385

Texto completo

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9571785
https://dx.doi.org/10.3390/ma15196738

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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article

Texto completo

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9571785
https://dx.doi.org/10.3390/ma15196738

Imprimir

XML

PubMed Links

Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2022 Tipo de documento: Article