Influence of Additive N<sub>2</sub> on O<sub>2</sub> Plasma Ashing Process in Inductively Coupled Plasma.

Influence of Additive N₂ on O₂ Plasma Ashing Process in Inductively Coupled Plasma.

You, Ye-Bin; Lee, Young-Seok; Kim, Si-Jun; Cho, Chul-Hee; Seong, In-Ho; Jeong, Won-Nyoung; Choi, Min-Su; You, Shin-Jae.

Afiliação

You YB; Department of Physics, Chungnam National University, Daejeon 34134, Korea.
Lee YS; Department of Physics, Chungnam National University, Daejeon 34134, Korea.
Kim SJ; Department of Physics, Chungnam National University, Daejeon 34134, Korea.
Cho CH; Department of Physics, Chungnam National University, Daejeon 34134, Korea.
Seong IH; Department of Physics, Chungnam National University, Daejeon 34134, Korea.
Jeong WN; Department of Physics, Chungnam National University, Daejeon 34134, Korea.
Choi MS; Department of Physics, Chungnam National University, Daejeon 34134, Korea.
You SJ; Department of Physics, Chungnam National University, Daejeon 34134, Korea.

Nanomaterials (Basel) ; 12(21)2022 Oct 27.

Article em En | MEDLINE | ID: mdl-36364574