Improved Subthreshold Characteristics by Back-Gate Coupling on Ferroelectric ETSOI FETs.

Zhang, Zhaohao; Li, Yudong; Xu, Jing; Tang, Bo; Xiang, Jinjuan; Li, Junjie; Zhang, Qingzhu; Wu, Zhenhua; Yin, Huaxiang; Luo, Jun; Wang, Wenwu.

Afiliação

Zhang Z; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, CAS, Beijing, China.
Li Y; Changcheng Institute of Metrology & Measurement, Beijing, China.
Xu J; School of Integrated Circuits of University of Chinese Academy of Sciences, Beijing, 100049, China.
Tang B; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, CAS, Beijing, China.
Xiang J; Changcheng Institute of Metrology & Measurement, Beijing, China.
Li J; School of Integrated Circuits of University of Chinese Academy of Sciences, Beijing, 100049, China.
Zhang Q; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, CAS, Beijing, China.
Wu Z; Changcheng Institute of Metrology & Measurement, Beijing, China.
Yin H; School of Integrated Circuits of University of Chinese Academy of Sciences, Beijing, 100049, China.
Luo J; Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, CAS, Beijing, China.
Wang W; Changcheng Institute of Metrology & Measurement, Beijing, China.