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ReS2 on GaN Photodetector Using H+ Ion-Cut Technology.
Liu, Xinke; Zhou, Jie; Luo, Jiangliu; Shi, Hangning; You, Tiangui; Ou, Xin; Botcha, Venkatadivakar; Mu, Fengwen; Suga, Tadatomo; Wang, Xinzhong; Huang, Shuangwu.
Afiliação
  • Liu X; College of Materials Science and Engineering, College of Electronics and Information Engineering, Institute of Microelectronics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen518060, China.
  • Zhou J; College of Materials Science and Engineering, College of Electronics and Information Engineering, Institute of Microelectronics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen518060, China.
  • Luo J; College of Materials Science and Engineering, College of Electronics and Information Engineering, Institute of Microelectronics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen518060, China.
  • Shi H; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai200050, China.
  • You T; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing100049, China.
  • Ou X; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai200050, China.
  • Botcha V; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing100049, China.
  • Mu F; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai200050, China.
  • Suga T; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing100049, China.
  • Wang X; College of Materials Science and Engineering, College of Electronics and Information Engineering, Institute of Microelectronics, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen518060, China.
  • Huang S; SABers Co., Ltd., Tianjing300451, China.
ACS Omega ; 8(1): 457-463, 2023 Jan 10.
Article em En | MEDLINE | ID: mdl-36643520
ABSTRACT
The wafer-scale single-crystal GaN film was transferred from a commercial bulk GaN wafer onto a Si (100) substrate by combining ion-cut and surface-activated bonding. Well-defined, uniformly thick, and large-scale wafer size ReS2 multilayers were grown on the GaN substrate. Finally, ReS2 photodetectors were fabricated on GaN and sapphire substrates, respectively, and their performances were compared. Due to the polarization effect of GaN, the ReS2/GaN photodetector showed better performance. The ReS2/GaN photodetector has a responsivity of 40.12 A/W, while ReS2/sapphire has a responsivity of 0.17 A/W. In addition, the ReS2/GaN photodetector properties have reached an excellent reasonable level, including a photoconductive gain of 447.30, noise-equivalent power of 1.80 × 10-14 W/Hz1/2, and detectivity of 1.21 × 1010 Jones. This study expands the way to enhance the performance of ReS2 photodetectors.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article
Texto completo
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PubMed Links
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article