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Insulator-to-metal phase transition in a few-layered MoSe2 field effect transistor.
Pradhan, Nihar R; Garcia, Carlos; Chakrabarti, Bhaswar; Rosenmann, Daniel; Divan, Ralu; Sumant, Anirudha V; Miller, Suzanne; Hilton, David; Karaiskaj, Denis; McGill, Stephen A.
Afiliação
  • Pradhan NR; Layered Materials and Device Physics Laboratory, Department of Chemistry, Physics and Atmospheric Science, Jackson State University, Jackson, MS 39217, USA. nihar.r.pradhan@jsums.edu.
  • Garcia C; National High Magnetic Field Laboratory, 1800 E. Paul Dirac Dr., Tallahassee, FL 32310, USA. mcgill@magnet.fsu.edu.
  • Chakrabarti B; National High Magnetic Field Laboratory, 1800 E. Paul Dirac Dr., Tallahassee, FL 32310, USA. mcgill@magnet.fsu.edu.
  • Rosenmann D; Department of Physics, Florida State University, 77 Chieftan Way, Tallahassee, FL 32306, USA.
  • Divan R; Center for Nanoscale Materials, Argonne National Laboratory, 9700 S-Cass Avenue, Lemont, IL-60439, USA.
  • Sumant AV; Department of Electrical Engineering, Indian Institute of Technology Madras, Chennai, Tamil Nadu-600036, India.
  • Miller S; Center for Nanoscale Materials, Argonne National Laboratory, 9700 S-Cass Avenue, Lemont, IL-60439, USA.
  • Hilton D; Center for Nanoscale Materials, Argonne National Laboratory, 9700 S-Cass Avenue, Lemont, IL-60439, USA.
  • Karaiskaj D; Center for Nanoscale Materials, Argonne National Laboratory, 9700 S-Cass Avenue, Lemont, IL-60439, USA.
  • McGill SA; Center for Nanoscale Materials, Argonne National Laboratory, 9700 S-Cass Avenue, Lemont, IL-60439, USA.
Nanoscale ; 15(6): 2667-2673, 2023 Feb 09.
Article em En | MEDLINE | ID: mdl-36652441
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article
Texto completo
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article