Your browser doesn't support javascript.
loading
Persistent surface states with diminishing gap in MnBi2Te4/Bi2Te3 superlattice antiferromagnetic topological insulator.
Xu, Lixuan; Mao, Yuanhao; Wang, Hongyuan; Li, Jiaheng; Chen, Yujie; Xia, Yunyouyou; Li, Yiwei; Pei, Ding; Zhang, Jing; Zheng, Huijun; Huang, Kui; Zhang, Chaofan; Cui, Shengtao; Liang, Aiji; Xia, Wei; Su, Hao; Jung, Sungwon; Cacho, Cephise; Wang, Meixiao; Li, Gang; Xu, Yong; Guo, Yanfeng; Yang, Lexian; Liu, Zhongkai; Chen, Yulin; Jiang, Mianheng.
Afiliação
  • Xu L; Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; School of Physical Science and Technology, ShanghaiTech University and
  • Mao Y; College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China.
  • Wang H; School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China; University of Chinese Academy of Sciences, Beijing 100049, China.
  • Li J; State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China.
  • Chen Y; State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China.
  • Xia Y; School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China; University of Chinese Academy of Sciences, Beijing 100049, China.
  • Li Y; Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, UK.
  • Pei D; Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, UK.
  • Zhang J; School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China.
  • Zheng H; School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China.
  • Huang K; School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China.
  • Zhang C; College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China.
  • Cui S; School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China.
  • Liang A; School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China; ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China; Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
  • Xia W; School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China; ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China; University of Chinese Academy of Sciences, Beijing 100049, China.
  • Su H; School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China.
  • Jung S; Diamond Light Source, Harwell Campus, Didcot OX11 0DE, UK.
  • Cacho C; Diamond Light Source, Harwell Campus, Didcot OX11 0DE, UK.
  • Wang M; School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China; ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China.
  • Li G; School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China; ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China.
  • Xu Y; State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China; Frontier Science Center for Quantum Information, Beijing 100084, China; RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan.
  • Guo Y; School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China.
  • Yang L; State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China; Frontier Science Center for Quantum Information, Beijing 100084, China. Electronic address: lxyang@tsinghua.edu.cn.
  • Liu Z; School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China; ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China. Electronic address: liuzhk@shanghaitech.edu.cn.
  • Chen Y; School of Physical Science and Technology, ShanghaiTech University and CAS-Shanghai Science Research Center, Shanghai 201210, China; ShanghaiTech Laboratory for Topological Physics, Shanghai 200031, China; State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua Unive
  • Jiang M; Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; School of Physical Science and Technology, ShanghaiTech University and
Sci Bull (Beijing) ; 65(24): 2086-2093, 2020 Dec 30.
Article em En | MEDLINE | ID: mdl-36732961
Magnetic topological quantum materials (TQMs) provide a fertile ground for the emergence of fascinating topological magneto-electric effects. Recently, the discovery of intrinsic antiferromagnetic (AFM) topological insulator MnBi2Te4 that could realize quantized anomalous Hall effect and axion insulator phase ignited intensive study on this family of TQM compounds. Here, we investigated the AFM compound MnBi4Te7 where Bi2Te3 and MnBi2Te4 layers alternate to form a superlattice. Using spatial- and angle-resolved photoemission spectroscopy, we identified ubiquitous (albeit termination dependent) topological electronic structures from both Bi2Te3 and MnBi2Te4 terminations. Unexpectedly, while the bulk bands show strong temperature dependence correlated with the AFM transition, the topological surface states with a diminishing gap show negligible temperature dependence across the AFM transition. Together with the results of its sister compound MnBi2Te4, we illustrate important aspects of electronic structures and the effect of magnetic ordering in this family of magnetic TQMs.
Palavras-chave

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2020 Tipo de documento: Article