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Engineering of Hole Transporting Interface by Incorporating the Atomic-Precision Ag6 Nanoclusters for High-Efficiency Blue Perovskite Light-Emitting Diodes.
Zhang, Fujun; Gao, Yanbo; Lu, Po; Zhong, Yuan; Liu, Yue; Bao, Xinyu; Xu, Zehua; Lu, Min; Wu, Yanjie; Chen, Ping; Hu, Junhua; Zhang, Yu; Wu, Zhennan; Song, Hongwei; Bai, Xue.
Afiliação
  • Zhang F; State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, China.
  • Gao Y; State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, China.
  • Lu P; State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, China.
  • Zhong Y; State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, China.
  • Liu Y; State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, China.
  • Bao X; State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, China.
  • Xu Z; State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, China.
  • Lu M; State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, China.
  • Wu Y; State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, China.
  • Chen P; State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, China.
  • Hu J; State Centre for International Cooperation on Designer Low-Carbon & Environmental Materials, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450051, China.
  • Zhang Y; State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, China.
  • Wu Z; State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, China.
  • Song H; State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, China.
  • Bai X; State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street, Changchun 130012, China.
Nano Lett ; 23(4): 1582-1590, 2023 Feb 22.
Article em En | MEDLINE | ID: mdl-36763855
ABSTRACT
Properties of the underlying hole transport layer (HTL) play a crucial role in determining the optoelectronic performance of perovskite light-emitting devices (PeLEDs). However, endowing the current HTL system with a deep highest occupied molecular orbital (HOMO) level concurrent with high hole mobility is still a big challenge, in particular being an open constraint toward high-efficiency blue PeLEDs. In this regard, employing the poly(9-vinylcarbazole) as a model, we perform efficient incorporation of the atomic-precision metal nanoclusters (NCs), [Ag6PL6, PL = (S)-4-phenylthiazolidine-2-thione], to achieve significant tailoring in both HOMO energy level and hole mobility. As a result, the as-modified PeLEDs exhibit an external quantum efficiency (EQE) of 14.29% at 488 nm. The presented study exemplifies the success of metal NC involved HTL engineering and offers a simple yet effective additive strategy to settle the blue PeLED HTL dilemma, which paves the way for the fabrication of highly efficient blue PeLEDs.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article
Texto completo
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article