Universally Exhaustive Generation of Molecular Structures and Prediction of Their Electronic States Using Machine Learning for N-type Organic Transistor Materials.

Ohno, Akira; Hanna, Jun-Ichi; Iino, Hiroaki; Nakago, Kosuke; Yamaguchi, Taiki; Abe, Motoki; Akita, Hirotaka; Takemoto, Mizuki

Ohno, Akira; Hanna, Jun-Ichi; Iino, Hiroaki; Nakago, Kosuke; Yamaguchi, Taiki; Abe, Motoki; Akita, Hirotaka; Takemoto, Mizuki.

Afiliação

Ohno A; Tokyo Institute of Technology, Imaging Science and Engineering Research Center, J1-2, 4259 Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan.
Hanna JI; Tokyo Institute of Technology, Imaging Science and Engineering Research Center, J1-2, 4259 Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan.
Iino H; Tokyo Institute of Technology, Imaging Science and Engineering Research Center, J1-2, 4259 Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan.
Nakago K; Preferred Networks, Inc., 1-6-1, Ootemachi, Chiyoda-ku, Tokyo, 100-0004, Japan.
Yamaguchi T; Preferred Networks, Inc., 1-6-1, Ootemachi, Chiyoda-ku, Tokyo, 100-0004, Japan.
Abe M; Preferred Networks, Inc., 1-6-1, Ootemachi, Chiyoda-ku, Tokyo, 100-0004, Japan.
Akita H; Preferred Networks, Inc., 1-6-1, Ootemachi, Chiyoda-ku, Tokyo, 100-0004, Japan.
Takemoto M; Preferred Networks, Inc., 1-6-1, Ootemachi, Chiyoda-ku, Tokyo, 100-0004, Japan.

Chem Asian J ; 18(8): e202300029, 2023 Apr 17.

Article em En | MEDLINE | ID: mdl-36808824