Advantages of Ta-Doped Sb<sub>3</sub>Te<sub>1</sub> Materials for Phase Change Memory Applications.

Advantages of Ta-Doped Sb₃Te₁ Materials for Phase Change Memory Applications.

Shao, Mingyue; Qiao, Yang; Xue, Yuan; Song, Sannian; Song, Zhitang; Li, Xiaodan.

Afiliação

Shao M; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
Qiao Y; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Xue Y; The Microelectronic Research & Development Center, Shanghai University, Shanghai 200444, China.
Song S; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
Song Z; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
Li X; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.

Nanomaterials (Basel) ; 13(4)2023 Feb 05.

Article em En | MEDLINE | ID: mdl-36839001