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A Hierarchically Structured Graphene/Ag Nanowires Paper as Thermal Interface Material.
Lv, Le; Ying, Junfeng; Chen, Lu; Tao, Peidi; Sun, Liwen; Yang, Ke; Fu, Li; Yu, Jinhong; Yan, Qingwei; Dai, Wen; Jiang, Nan; Lin, Cheng-Te.
Afiliação
  • Lv L; Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences, Ningbo 315201, China.
  • Ying J; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Chen L; Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences, Ningbo 315201, China.
  • Tao P; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Sun L; Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences, Ningbo 315201, China.
  • Yang K; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Fu L; Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences, Ningbo 315201, China.
  • Yu J; Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences, Ningbo 315201, China.
  • Yan Q; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China.
  • Dai W; Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences, Ningbo 315201, China.
  • Jiang N; Key Laboratory of Novel Materials for Sensor of Zhejiang Province, College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, China.
  • Lin CT; Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences, Ningbo 315201, China.
Nanomaterials (Basel) ; 13(5)2023 Feb 21.
Article em En | MEDLINE | ID: mdl-36903671
ABSTRACT
With the increase in heat power density in modern integrating electronics, thermal interface materials (TIM) that can efficiently fill the gaps between the heat source and heat sinks and enhance heat dissipation are urgently needed owing to their high thermal conductivity and excellent mechanical durability. Among all the emerged TIMs, graphene-based TIMs have attracted increasing attention because of the ultrahigh intrinsic thermal conductivity of graphene nanosheets. Despite extensive efforts, developing high-performance graphene-based papers with high through-plane thermal conductivity remains challenging despite their high in-plane thermal conductivity. In this study, a novel strategy for enhancing the through-plane thermal conductivity of graphene papers by in situ depositing AgNWs on graphene sheets (IGAP) was proposed, which could boost the through-plane thermal conductivity of the graphene paper up to 7.48 W m-1 K-1 under packaging conditions. In the TIM performance test under actual and simulated operating conditions, our IGAP exhibits strongly enhanced heat dissipation performance compared to the commercial thermal pads. We envision that our IGAP as a TIM has great potential for boosting the development of next-generation integrating circuit electronics.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article