Impact of Stress and Dimension on Nanosheet Deformation during Channel Release of Gate-All-Around Device.

Yang, Jingwen; Chen, Kun; Wang, Dawei; Liu, Tao; Sun, Xin; Wang, Qiang; Huang, Ziqiang; Pan, Zhecheng; Xu, Saisheng; Wang, Chen; Wu, Chunlei; Xu, Min; Zhang, David Wei

Yang, Jingwen; Chen, Kun; Wang, Dawei; Liu, Tao; Sun, Xin; Wang, Qiang; Huang, Ziqiang; Pan, Zhecheng; Xu, Saisheng; Wang, Chen; Wu, Chunlei; Xu, Min; Zhang, David Wei.

Afiliação

Yang J; School of Microelectronics, Fudan University, Shanghai 200433, China.
Chen K; School of Microelectronics, Fudan University, Shanghai 200433, China.
Wang D; Shanghai Integrated Circuit Manufacturing Innovation Center Co., Ltd., Shanghai 201203, China.
Liu T; School of Microelectronics, Fudan University, Shanghai 200433, China.
Sun X; School of Microelectronics, Fudan University, Shanghai 200433, China.
Wang Q; School of Microelectronics, Fudan University, Shanghai 200433, China.
Huang Z; School of Microelectronics, Fudan University, Shanghai 200433, China.
Pan Z; School of Microelectronics, Fudan University, Shanghai 200433, China.
Xu S; School of Microelectronics, Fudan University, Shanghai 200433, China.
Wang C; School of Microelectronics, Fudan University, Shanghai 200433, China.
Wu C; School of Microelectronics, Fudan University, Shanghai 200433, China.
Xu M; Shanghai Integrated Circuit Manufacturing Innovation Center Co., Ltd., Shanghai 201203, China.
Zhang DW; School of Microelectronics, Fudan University, Shanghai 200433, China.