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IBIL Measurement and Optical Simulation of the DI Center in 4H-SiC.
Jiang, Wenli; Cheng, Wei; Qiu, Menglin; Wu, Shuai; Ouyang, Xiao; Chen, Lin; Pang, Pan; Ying, Minju; Liao, Bin.
Afiliação
  • Jiang W; Key Laboratory of Beam Technology of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China.
  • Cheng W; Key Laboratory of Beam Technology of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China.
  • Qiu M; Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
  • Wu S; Key Laboratory of Beam Technology of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China.
  • Ouyang X; Institute of Radiation Technology, Beijing Academy of Science and Technology, Beijing 100875, China.
  • Chen L; Key Laboratory of Beam Technology of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China.
  • Pang P; Key Laboratory of Beam Technology of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China.
  • Ying M; Key Laboratory of Beam Technology of Ministry of Education, College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China.
  • Liao B; Institute of Radiation Technology, Beijing Academy of Science and Technology, Beijing 100875, China.
Materials (Basel) ; 16(7)2023 Apr 06.
Article em En | MEDLINE | ID: mdl-37049229

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article