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Wurtzite and fluorite ferroelectric materials for electronic memory.
Kim, Kwan-Ho; Karpov, Ilya; Olsson, Roy H; Jariwala, Deep.
Afiliação
  • Kim KH; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA.
  • Karpov I; Components Research, Intel Corporation, Hillsboro, OR, USA.
  • Olsson RH; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA.
  • Jariwala D; Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA. dmj@seas.upenn.edu.
Nat Nanotechnol ; 18(5): 422-441, 2023 May.
Article em En | MEDLINE | ID: mdl-37106053
Ferroelectric materials, the charge equivalent of magnets, have been the subject of continued research interest since their discovery more than 100 years ago. The spontaneous electric polarization in these crystals, which is non-volatile and programmable, is appealing for a range of information technologies. However, while magnets have found their way into various types of modern information technology hardware, applications of ferroelectric materials that use their ferroelectric properties are still limited. Recent advances in ferroelectric materials with wurtzite and fluorite structure have renewed enthusiasm and offered new opportunities for their deployment in commercial-scale devices in microelectronics hardware. This Review focuses on the most recent and emerging wurtzite-structured ferroelectric materials and emphasizes their applications in memory and storage-based microelectronic hardware. Relevant comparisons with existing fluorite-structured ferroelectric materials are made and a detailed outlook on ferroelectric materials and devices applications is provided.

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article