Gate-Tunable Multiband Transport in ZrTe<sub>5</sub> Thin Devices.

Gate-Tunable Multiband Transport in ZrTe₅ Thin Devices.

Liu, Yonghe; Pi, Hanqi; Watanabe, Kenji; Taniguchi, Takashi; Gu, Genda; Li, Qiang; Weng, Hongming; Wu, Quansheng; Li, Yongqing; Xu, Yang.

Afiliação

Liu Y; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
Pi H; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
Watanabe K; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
Taniguchi T; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
Gu G; Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
Li Q; International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
Weng H; Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973-5000, United States.
Wu Q; Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973-5000, United States.
Li Y; Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York 11794-3800, United States.
Xu Y; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.