Finite Element Approach for the Simulation of Modern MRAM Devices.

Fiorentini, Simone; Jørstad, Nils Petter; Ender, Johannes; de Orio, Roberto Lacerda; Selberherr, Siegfried; Bendra, Mario; Goes, Wolfgang; Sverdlov, Viktor.

Afiliação

Fiorentini S; Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic at the Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Vienna, Austria.
Jørstad NP; Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Vienna, Austria.
Ender J; Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic at the Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Vienna, Austria.
de Orio RL; Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Vienna, Austria.
Selberherr S; Christian Doppler Laboratory for Nonvolatile Magnetoresistive Memory and Logic at the Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Vienna, Austria.
Bendra M; Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Vienna, Austria.
Goes W; Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Vienna, Austria.
Sverdlov V; Institute for Microelectronics, TU Wien, Gußhausstraße 27-29/E360, 1040 Vienna, Austria.

Micromachines (Basel) ; 14(5)2023 Apr 22.

Article em En | MEDLINE | ID: mdl-37241522