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Berry curvature dipole generation and helicity-to-spin conversion at symmetry-mismatched heterointerfaces.
Duan, Siyu; Qin, Feng; Chen, Peng; Yang, Xupeng; Qiu, Caiyu; Huang, Junwei; Liu, Gan; Li, Zeya; Bi, Xiangyu; Meng, Fanhao; Xi, Xiaoxiang; Yao, Jie; Ideue, Toshiya; Lian, Biao; Iwasa, Yoshihiro; Yuan, Hongtao.
Afiliação
  • Duan S; National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
  • Qin F; National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
  • Chen P; National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
  • Yang X; Institute of Physics, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland.
  • Qiu C; National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
  • Huang J; National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
  • Liu G; National Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing, China.
  • Li Z; National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
  • Bi X; National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
  • Meng F; National Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing, China.
  • Xi X; Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA, USA.
  • Yao J; National Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing, China.
  • Ideue T; Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA, USA.
  • Lian B; Quantum Phase Electronic Center and Department of Applied Physics, The University of Tokyo, Tokyo, Japan. ideue@issp.u-tokyo.ac.jp.
  • Iwasa Y; Institute for Solid State Physics, The University of Tokyo, Chiba, Japan. ideue@issp.u-tokyo.ac.jp.
  • Yuan H; Department of Physics, Princeton University, Princeton, NJ, USA. biao@princeton.edu.
Nat Nanotechnol ; 18(8): 867-874, 2023 Aug.
Article em En | MEDLINE | ID: mdl-37322146
ABSTRACT
The Berry curvature dipole (BCD) is a key parameter that describes the geometric nature of energy bands in solids. It defines the dipole-like distribution of Berry curvature in the band structure and plays a key role in emergent nonlinear phenomena. The theoretical rationale is that the BCD can be generated at certain symmetry-mismatched van der Waals heterointerfaces even though each material has no BCD in its band structure. However, experimental confirmation of such a BCD induced via breaking of the interfacial symmetry remains elusive. Here we demonstrate a universal strategy for BCD generation and observe BCD-induced gate-tunable spin-polarized photocurrent at WSe2/SiP interfaces. Although the rotational symmetry of each material prohibits the generation of spin photocurrent under normal incidence of light, we surprisingly observe a direction-selective spin photocurrent at the WSe2/SiP heterointerface with a twist angle of 0°, whose amplitude is electrically tunable with the BCD magnitude. Our results highlight a BCD-spin-valley correlation and provide a universal approach for engineering the geometric features of twisted heterointerfaces.

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article