Halogen Doping Mechanism and Interface Strengthening in the Na<sub>3</sub>SbS<sub>4</sub> Electrolyte via Solid-State Synthesis.

Halogen Doping Mechanism and Interface Strengthening in the Na₃SbS₄ Electrolyte via Solid-State Synthesis.

Yu, Liangliang; Yin, Jingxuan; Gao, Chengwei; Lin, Changgui; Shen, Xiang; Dai, Shixun; Jiao, Qing.

Afiliação

Yu L; Laboratory of Infrared Material and Devices, Advanced Technology Research Institute, Ningbo University, Ningbo 315211, China.
Yin J; Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211, China.
Gao C; Laboratory of Infrared Material and Devices, Advanced Technology Research Institute, Ningbo University, Ningbo 315211, China.
Lin C; Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211, China.
Shen X; Laboratory of Infrared Material and Devices, Advanced Technology Research Institute, Ningbo University, Ningbo 315211, China.
Dai S; Laboratory of Infrared Material and Devices, Advanced Technology Research Institute, Ningbo University, Ningbo 315211, China.
Jiao Q; Laboratory of Infrared Material and Devices, Advanced Technology Research Institute, Ningbo University, Ningbo 315211, China.

ACS Appl Mater Interfaces ; 15(26): 31635-31642, 2023 Jul 05.

Article em En | MEDLINE | ID: mdl-37345989