All-silicon TM polarizer covering the 1260-1675â
nm bandwidth using a band engineered subwavelength grating waveguide.
Opt Lett
; 48(13): 3431-3434, 2023 Jul 01.
Article
em En
| MEDLINE
| ID: mdl-37390148
ABSTRACT
A TM polarizer working for whole optical communication bands with high performance is proposed on a 220-nm-thick silicon-on-insulator (SOI) platform. The device is based on polarization-dependent band engineering in a subwavelength grating waveguide (SWGW). By utilizing an SWGW with a relatively larger lateral width, an ultra-broad bandgap of â¼476â
nm (1238â
nm-1714nm) is obtained for the TE mode, while the TM mode is well supported in this range. Then, a novel tapered and chirped grating design is adopted for efficient mode conversion, which results in a polarizer with a compact footprint (3.0â
µm × 18 µm), low insertion loss (IL < 1.15â
dB) and high polarization extinction ratio (PER > 21â
dB) covering O-U bands (1260â
nm-1675â
nm). Experimental results show that the fabricated device has an IL < 1.0â
dB and PER > 22â
dB over a 300-â
nm bandwidth, which is limited by our measurement setup. To the best of our knowledge, no TM polarizer on the 220-nm SOI platform with comparable performance covering O-U bands has ever been reported.
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Base de dados:
MEDLINE
Assunto principal:
Silício
/
Engenharia
Idioma:
En
Ano de publicação:
2023
Tipo de documento:
Article