Ferroelectric-Gated All 2D Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing.

ABSTRACT

With the continuous scaling down of the modern integrated circuits, conventional metal-oxide-semiconductor field effect transistors are becoming inefficient due to various nonideal effects such as enhanced short-channel effects. Recently, emerging two-dimensional (2D) ferroelectrics have demonstrated their ability to maintain ferroelectricity at the nanoscale and have shown superior properties compared to three-dimensional ferroelectrics. Here, we report a ferroelectric field effect transistor composed of all 2D van der Waals (vdWs) heterostructures and provide a comprehensive study of the modulation of ferroelectric polarization on the carrier transport properties. Remarkably, the ferroelectric polarization allowed for achieving an ultralow subthreshold swing of just 26 mV/dec and a high carrier mobility of up to 72.3 cm2/(V s) at a smaller drain voltage of 10 mV. These impressive characteristics offer new insights into evaluating the regulatory effect of ferroelectric polarization on the electrical properties of all 2D vdWs heterostructures.