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Layer-Dependent Interaction Effects in the Electronic Structure of Twisted Bilayer Graphene Devices.
Dale, Nicholas; Utama, M Iqbal Bakti; Lee, Dongkyu; Leconte, Nicolas; Zhao, Sihan; Lee, Kyunghoon; Taniguchi, Takashi; Watanabe, Kenji; Jozwiak, Chris; Bostwick, Aaron; Rotenberg, Eli; Koch, Roland J; Jung, Jeil; Wang, Feng; Lanzara, Alessandra.
Afiliação
  • Dale N; Department of Physics, University of California, Berkeley, California 94720, United States.
  • Utama MIB; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.
  • Lee D; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.
  • Leconte N; Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, California 94720, United States.
  • Zhao S; Department of Physics, University of Seoul, Seoul, 02504, Korea.
  • Lee K; Department of Smart Cities, University of Seoul, Seoul, 02504, Korea.
  • Taniguchi T; Department of Physics, University of Seoul, Seoul, 02504, Korea.
  • Watanabe K; Interdisciplinary Center for Quantum Information, Zhejiang Province Key Laboratory of Quantum Technology and Device, State Key Laboratory of Silicon Materials, and School of Physics, Zhejiang University, Hangzhou 310027, China.
  • Jozwiak C; Department of Physics, University of California, Berkeley, California 94720, United States.
  • Bostwick A; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.
  • Rotenberg E; International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
  • Koch RJ; Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
  • Jung J; Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.
  • Wang F; Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.
  • Lanzara A; Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.
Nano Lett ; 23(15): 6799-6806, 2023 Aug 09.
Article em En | MEDLINE | ID: mdl-37486984
ABSTRACT
Near the magic angle, strong correlations drive many intriguing phases in twisted bilayer graphene (tBG) including unconventional superconductivity and chern insulation. Whether correlations can tune symmetry breaking phases in tBG at intermediate (≳ 2°) twist angles remains an open fundamental question. Here, using ARPES, we study the effects of many-body interactions and displacement field on the band structure of tBG devices at an intermediate (3°) twist angle. We observe a layer- and doping-dependent renormalization of bands at the K points that is qualitatively consistent with moiré models of the Hartree-Fock interaction. We provide evidence of correlation-enhanced inversion symmetry-breaking, manifested by gaps at the Dirac points that are tunable with doping. These results suggest that electronic interactions play a significant role in the physics of tBG even at intermediate twist angles and present a new pathway toward engineering band structure and symmetry-breaking phases in moiré heterostructures.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article