Dopant Mapping of Partially Hydrogenated Vanadium Dioxide using the Energy Loss Near Edge Structure Technique.

Pofelski, A; Deng, S; Yu, H; Park, T J; Jia, H; Manna, S; Chan, M K Y; Sankaranarayanan, S K Rs; Ramanathan, S; Zhu, Y.

Afiliação

Pofelski A; Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY, USA.
Deng S; School of Materials Engineering, Purdue University, West Lafayette, IN, USA.
Yu H; School of Materials Engineering, Purdue University, West Lafayette, IN, USA.
Park TJ; School of Materials Engineering, Purdue University, West Lafayette, IN, USA.
Jia H; Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL, USA.
Manna S; Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL, USA.
Chan MKY; Department of Mechanical and Industrial Engineering, University of Illinois, Chicago, IL, USA.
Sankaranarayanan SKR; Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL, USA.
Ramanathan S; Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL, USA.
Zhu Y; Department of Mechanical and Industrial Engineering, University of Illinois, Chicago, IL, USA.

Microsc Microanal ; 29(Supplement_1): 1667-1668, 2023 Jul 22.

Article em En | MEDLINE | ID: mdl-37613910

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article