Your browser doesn't support javascript.
loading
Reconfigurable spin tunnel diodes by doping engineering VS2 monolayers.
Yu, Sheng; Shi, Wenwu; Li, Qiliang; Xu, Feixiang; Gu, Li; Wang, Xinzhong.
Afiliação
  • Yu S; Institute of Information Technology, Shenzhen Institute of Information Technology, Shenzhen 518172, China. flutelad@126.com.
  • Shi W; Institute of Information Technology, Shenzhen Institute of Information Technology, Shenzhen 518172, China. flutelad@126.com.
  • Li Q; Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030, USA.
  • Xu F; South China Advanced Institute for Soft Matter Science and Technology (AISMST), South China University of Technology, Guangzhou, China.
  • Gu L; Institute of Information Technology, Shenzhen Institute of Information Technology, Shenzhen 518172, China. flutelad@126.com.
  • Wang X; Institute of Information Technology, Shenzhen Institute of Information Technology, Shenzhen 518172, China. flutelad@126.com.
Phys Chem Chem Phys ; 25(38): 26211-26218, 2023 Oct 04.
Article em En | MEDLINE | ID: mdl-37740328
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article