Your browser doesn't support javascript.
loading
Lattice-Gradient Perovskite KTaO3 Films for an Ultrastable and Low-Dose X-Ray Detector.
Li, Liqi; Fang, Xuchao; Zhang, Zijun; Yang, Qian; Wang, Fei; Li, Menglu; Zhu, Ruixue; Wang, Lixiang; Zhu, Yihan; Miao, Xiaohe; Lu, Yangfan; Shi, Junhui; Wu, Yongjun; Liu, Gang; Fang, Yanjun; Tian, He; Ren, Zhaohui; Yang, Deren; Han, Gaorong.
Afiliação
  • Li L; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Fang X; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Zhang Z; Center of Electron Microscope, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Yang Q; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Wang F; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Li M; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Zhu R; Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China.
  • Wang L; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Zhu Y; Center for Electron Microscopy, State Key Laboratory Breeding Base of Green Chemistry, Synthesis Technology and College of Chemical Engineering, Zhejiang University of Technology, Hangzhou, 310014, China.
  • Miao X; Instrumentation and Service Center for Physical Sciences, Westlake University, Hangzhou, Zhejiang, 310024, China.
  • Lu Y; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Shi J; Research Center for Humanoid Sensing, Zhejianglab, Hangzhou, 311100, China.
  • Wu Y; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Liu G; Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China.
  • Fang Y; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Tian H; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Ren Z; Center of Electron Microscope, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
  • Yang D; School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China.
  • Han G; State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
Adv Mater ; 35(47): e2211026, 2023 Nov.
Article em En | MEDLINE | ID: mdl-37796177

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article