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Optimizing the Buried Interface in Flexible Perovskite Solar Cells to Achieve Over 24% Efficiency and Long-Term Stability.
Xu, Ruoyao; Pan, Fang; Chen, Jinyu; Li, Jingrui; Yang, Yingguo; Sun, Yulu; Zhu, Xinyi; Li, Peizhou; Cao, Xiangrong; Xi, Jun; Xu, Jie; Yuan, Fang; Dai, Jinfei; Zuo, Chuantian; Ding, Liming; Dong, Hua; Jen, Alex K-Y; Wu, Zhaoxin.
Afiliação
  • Xu R; Key Laboratory for Physical Electronics and Devices (MoE) & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
  • Pan F; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
  • Chen J; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
  • Li J; Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
  • Yang Y; School of Microelectronics, Fudan University, Shanghai, 200433, China.
  • Sun Y; Shanghai Synchrotron Radiation Facility (SSRF), Zhangjiang Lab, Shanghai Advanced Research Institute, Shanghai Institute of Applied Physics (CAS), Shanghai, 201204, China.
  • Zhu X; Key Laboratory for Physical Electronics and Devices (MoE) & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
  • Li P; Key Laboratory for Physical Electronics and Devices (MoE) & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
  • Cao X; Key Laboratory for Physical Electronics and Devices (MoE) & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
  • Xi J; Key Laboratory for Physical Electronics and Devices (MoE) & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
  • Xu J; Key Laboratory for Physical Electronics and Devices (MoE) & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
  • Yuan F; Key Laboratory for Physical Electronics and Devices (MoE) & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
  • Dai J; Key Laboratory for Physical Electronics and Devices (MoE) & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
  • Zuo C; Key Laboratory for Physical Electronics and Devices (MoE) & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
  • Ding L; Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, China.
  • Dong H; Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, China.
  • Jen AK; Key Laboratory for Physical Electronics and Devices (MoE) & Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
  • Wu Z; Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, China.
Adv Mater ; 36(7): e2308039, 2024 Feb.
Article em En | MEDLINE | ID: mdl-37802505
ABSTRACT
The buried interface of the perovskite layer has a profound influence on its film morphology, defect formation, and aging resistance from the outset, therefore, significantly affects the film quality and device performance of derived perovskite solar cells. Especially for FAPbI3 , although it has excellent optoelectronic properties, the spontaneous transition from the black perovskite phase to nonperovskite phase tends to start from the buried interface at the early stage of film formation then further propagate to degrade the whole perovskite. In this work, by introducing ─NH3 + rich proline hydrochloride (PF) with a conjugated rigid structure as a versatile medium for buried interface, it not only provides a solid α-phase FAPbI3 template, but also prevents the phase transition induced degradation. PF also acts as an effective interfacial stress reliever to enhance both efficiency and stability of flexible solar cells. Consequently, a champion efficiency of 24.61% (certified 23.51%) can be achieved, which is the highest efficiency among all reported values for flexible perovskite solar cells. Besides, devices demonstrate excellent shelf-life/light soaking stability (advanced level of ISOS stability protocols) and mechanical stability.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article