Suppression of the redox reaction between the IGZO surface and the reducing agent TMA using fluorine oxidizing agent treatment.

Jang, Yuseong; Lee, Jinkyu; Mok, Jinsung; Park, Junhyeong; Shin, Seung Yoon; Lee, Soo-Yeon.

Afiliação

Jang Y; Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University 1 Gwanak-ro, Gwanak-gu Seoul 08826 Republic of Korea sooyeon.lee@snu.ac.kr.
Lee J; Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University 1 Gwanak-ro, Gwanak-gu Seoul 08826 Republic of Korea sooyeon.lee@snu.ac.kr.
Mok J; Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University 1 Gwanak-ro, Gwanak-gu Seoul 08826 Republic of Korea sooyeon.lee@snu.ac.kr.
Park J; Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University 1 Gwanak-ro, Gwanak-gu Seoul 08826 Republic of Korea sooyeon.lee@snu.ac.kr.
Shin SY; Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University 1 Gwanak-ro, Gwanak-gu Seoul 08826 Republic of Korea sooyeon.lee@snu.ac.kr.
Lee SY; Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University 1 Gwanak-ro, Gwanak-gu Seoul 08826 Republic of Korea sooyeon.lee@snu.ac.kr.

RSC Adv ; 13(47): 33269-33275, 2023 Nov 07.

Article em En | MEDLINE | ID: mdl-37964900

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article