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High-performance monolayer MoS2nanosheet GAA transistor.
Chou, Bo-Jhih; Chung, Yun-Yan; Yun, Wei-Sheng; Hsu, Chen-Feng; Li, Ming-Yang; Su, Sheng-Kai; Liew, San-Lin; Hou, Vincent Duen-Huei; Chen, Chien-Wei; Kei, Chi-Chung; Shen, Yun-Yang; Chang, Wen-Hao; Lee, T Y; Cheng, Chao-Ching; Radu, Iuliana P; Chien, Chao-Hsin.
Afiliação
  • Chou BJ; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan.
  • Chung YY; Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan.
  • Yun WS; Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan.
  • Hsu CF; Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan.
  • Li MY; Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan.
  • Su SK; Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan.
  • Liew SL; Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan.
  • Hou VD; Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan.
  • Chen CW; Taiwan Instrument Research Institute, National Applied Research Laboratories, Hsinchu, Taiwan.
  • Kei CC; Taiwan Instrument Research Institute, National Applied Research Laboratories, Hsinchu, Taiwan.
  • Shen YY; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan.
  • Chang WH; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan.
  • Lee TY; Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan.
  • Cheng CC; Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan.
  • Radu IP; Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan.
  • Chien CH; Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan.
Nanotechnology ; 35(12)2024 Jan 04.
Article em En | MEDLINE | ID: mdl-38061057

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article