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Tabletop extreme ultraviolet reflectometer for quantitative nanoscale reflectometry, scatterometry, and imaging.
Esashi, Yuka; Jenkins, Nicholas W; Shao, Yunzhe; Shaw, Justin M; Park, Seungbeom; Murnane, Margaret M; Kapteyn, Henry C; Tanksalvala, Michael.
Afiliação
  • Esashi Y; Department of Physics, JILA, and STROBE NSF Science and Technology Center, University of Colorado Boulder and NIST, Boulder, Colorado 80309, USA.
  • Jenkins NW; Department of Physics, JILA, and STROBE NSF Science and Technology Center, University of Colorado Boulder and NIST, Boulder, Colorado 80309, USA.
  • Shao Y; Department of Physics, JILA, and STROBE NSF Science and Technology Center, University of Colorado Boulder and NIST, Boulder, Colorado 80309, USA.
  • Shaw JM; Quantum Electromagnetics Division, National Institute of Standards and Technology, Boulder, Colorado 80305, USA.
  • Park S; Core Technology R&D Team, Mechatronics Research, Samsung Electronics Co., Ltd., Hwasung 18848, Republic of Korea.
  • Murnane MM; Department of Physics, JILA, and STROBE NSF Science and Technology Center, University of Colorado Boulder and NIST, Boulder, Colorado 80309, USA.
  • Kapteyn HC; Department of Physics, JILA, and STROBE NSF Science and Technology Center, University of Colorado Boulder and NIST, Boulder, Colorado 80309, USA.
  • Tanksalvala M; KMLabs Inc., Boulder, Colorado 80301, USA.
Rev Sci Instrum ; 94(12)2023 Dec 01.
Article em En | MEDLINE | ID: mdl-38109468
ABSTRACT
Imaging using coherent extreme-ultraviolet (EUV) light provides exceptional capabilities for the characterization of the composition and geometry of nanostructures by probing with high spatial resolution and elemental specificity. We present a multi-modal tabletop EUV imaging reflectometer for high-fidelity metrology of nanostructures. The reflectometer is capable of measurements in three distinct modes intensity reflectometry, scatterometry, and imaging reflectometry, where each mode addresses different nanostructure characterization challenges. We demonstrate the system's unique ability to quantitatively and non-destructively measure the geometry and composition of nanostructures with tens of square microns field of view and sub-nanometer precision. Parameters such as surface and line edge roughness, density, nanostructure linewidth, and profile, as well as depth-resolved composition, can be quantitatively determined. The results highlight the applicability of EUV metrology to address a wide range of semiconductor and materials science challenges.

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2023 Tipo de documento: Article