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Field-free switching of perpendicular magnetization by two-dimensional PtTe2/WTe2 van der Waals heterostructures with high spin Hall conductivity.
Wang, Fei; Shi, Guoyi; Kim, Kyoung-Whan; Park, Hyeon-Jong; Jang, Jae Gwang; Tan, Hui Ru; Lin, Ming; Liu, Yakun; Kim, Taeheon; Yang, Dongsheng; Zhao, Shishun; Lee, Kyusup; Yang, Shuhan; Soumyanarayanan, Anjan; Lee, Kyung-Jin; Yang, Hyunsoo.
Afiliação
  • Wang F; Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
  • Shi G; Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
  • Kim KW; Integrative Sciences and Engineering Programme, NUS Graduate School, National University of Singapore, Singapore, Singapore.
  • Park HJ; Center of Spintronics, Korea Institute of Science and Technology, Seoul, Korea.
  • Jang JG; KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, Korea.
  • Tan HR; Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea.
  • Lin M; Institute of Materials Research & Engineering, Agency for Science Technology & Research (A*STAR), Singapore, Singapore.
  • Liu Y; Institute of Materials Research & Engineering, Agency for Science Technology & Research (A*STAR), Singapore, Singapore.
  • Kim T; Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
  • Yang D; Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
  • Zhao S; Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
  • Lee K; Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
  • Yang S; Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
  • Soumyanarayanan A; Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
  • Lee KJ; Institute of Materials Research & Engineering, Agency for Science Technology & Research (A*STAR), Singapore, Singapore.
  • Yang H; Department of Physics, National University of Singapore, Singapore, Singapore.
Nat Mater ; 23(6): 768-774, 2024 Jun.
Article em En | MEDLINE | ID: mdl-38243113
ABSTRACT
The key challenge of spin-orbit torque applications lies in exploring an excellent spin source capable of generating out-of-plane spins while exhibiting high spin Hall conductivity. Here we combine PtTe2 for high spin conductivity and WTe2 for low crystal symmetry to satisfy the above requirements. The PtTe2/WTe2 bilayers exhibit a high in-plane spin Hall conductivity σs,y ≈ 2.32 × 105 × h/2e Ω-1 m-1 and out-of-plane spin Hall conductivity σs,z ≈ 0.25 × 105 × h/2e Ω-1 m-1, where h is the reduced Planck's constant and e is the value of the elementary charge. The out-of-plane spins in PtTe2/WTe2 bilayers enable the deterministic switching of perpendicular magnetization at room temperature without magnetic fields, and the power consumption is 67 times smaller than that of the Pt control case. The high out-of-plane spin Hall conductivity is attributed to the conversion from in-plane spin to out-of-plane spin, induced by the crystal asymmetry of WTe2. Our work establishes a low-power perpendicular magnetization manipulation based on wafer-scale two-dimensional van der Waals heterostructures.

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article