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Mimicking Bidirectional Inhibitory Synapse Using a Porous-Confined Ionic Memristor with Electrolyte/Tris(4-aminophenyl)amine Neurotransmitter.
Chen, Kang; Pan, Keyuan; He, Shang; Liu, Rui; Zhou, Zhe; Zhu, Duoyi; Liu, Zhengdong; He, Zixi; Sun, Hongchao; Wang, Min; Wang, Kaili; Tang, Minghua; Liu, Juqing.
Afiliação
  • Chen K; School of Materials Science and Engineering, Xiangtan University, North Second Ring Road, Yuhu, Xiangtan, Hunan, 411105, China.
  • Pan K; Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
  • He S; School of Materials Science and Engineering, Xiangtan University, North Second Ring Road, Yuhu, Xiangtan, Hunan, 411105, China.
  • Liu R; School of Materials Science and Engineering, Xiangtan University, North Second Ring Road, Yuhu, Xiangtan, Hunan, 411105, China.
  • Zhou Z; Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
  • Zhu D; Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
  • Liu Z; Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
  • He Z; Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
  • Sun H; Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
  • Wang M; Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
  • Wang K; Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
  • Tang M; School of Materials Science and Engineering, Xiangtan University, North Second Ring Road, Yuhu, Xiangtan, Hunan, 411105, China.
  • Liu J; Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
Adv Sci (Weinh) ; 11(19): e2400966, 2024 May.
Article em En | MEDLINE | ID: mdl-38483027
ABSTRACT
Ionic memristors can emulate brain-like functions of biological synapses for neuromorphic technologies. Apart from the widely studied excitatory-excitatory and excitatory-inhibitory synapses, reports on memristors with the inhibitory-inhibitory synaptic behaviors remain a challenge. Here, the first biaxially inhibited artificial synapse is demonstrated, consisting of a solid electrolyte and conjugated microporous polymers bilayer as neurotransmitter, with the former serving as an ion reservoir and the latter acting as a confined transport. Due to the migration, trapping, and de-trapping of ions within the nanoslits, the device poses inhibitory synaptic plasticity under both positive and negative stimuli. Remarkably, the artificial synapse is able to maintain a low level of stable nonvolatile memory over a long period of time (≈60 min) after multiple stimuli, with feature-inferencing/-training capabilities of neural node in neuromorphic computing. This work paves a reliable strategy for constructing nanochannel ionic memristive materials toward fully inhibitory synaptic devices.
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Texto completo: 1 Base de dados: MEDLINE Assunto principal: Sinapses / Neurotransmissores / Eletrólitos Idioma: En Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Assunto principal: Sinapses / Neurotransmissores / Eletrólitos Idioma: En Ano de publicação: 2024 Tipo de documento: Article