Low-loss chalcogenide photonic devices with a secondary coating method.
Opt Express
; 32(6): 10527-10534, 2024 Mar 11.
Article
em En
| MEDLINE
| ID: mdl-38571261
ABSTRACT
In the traditional dry etching process for photonic device fabrication, the etching effect is influenced in many ways, usually resulting in relatively large sidewall roughness and high transmission loss. In this study, an effective method, namely the secondary coating method, is proposed to reduce the transmission loss of a Ge-Sb-Se chalcogenide waveguide and increase the quality factor (Q-factor) of a Ge-Sb-Se chalcogenide micro-ring resonator. The Ge-Sb-Se waveguide and micro-ring resonator are fabricated by ultraviolet exposure/electron beam lithography and inductively coupled plasma etching technology. Afterward, a 10â
nm-thick Ge-Sb-Se thin film is deposited by thermal evaporation. The measurements show that after secondary coating, the sidewall roughness of the waveguide is reduced from 11.96â
nm to 6.52â
nm, with the transmission loss reduced from 2.63± 0.19â
dB/cm to 1.86± 0.11â
dB/cm at 1.55â
µm wavelength. Keeping an equal coupling condition with equal radius and coupling distance, the Q-factor of the micro-ring resonator is improved by 47.5% after secondary coating. All results indicate that the secondary coating method is a feasible way to generate low-loss and high Q-factor integrated chalcogenide photonic devices.
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MEDLINE
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En
Ano de publicação:
2024
Tipo de documento:
Article