Silicon carbide single crystals for high-temperature supercapacitors.
Nanoscale
; 16(19): 9536-9544, 2024 May 16.
Article
em En
| MEDLINE
| ID: mdl-38659413
ABSTRACT
Designing advanced electrode materials that can be reliably cycled at high temperatures and used for assembling advanced energy storage devices remain a major challenge. As a representative of novel wide bandgap semiconductors, silicon carbide (SiC) single crystals have broad prospects in high-temperature energy storage due to their excellent characteristics such as low thermal expansion coefficient, high temperature radiation resistance and stable chemical properties. In this work, an N-type SiC single-crystal material with a high-density porous structure was successfully designed and prepared by using an improved electrochemical anodic oxidation strategy. Besides, the N-type SiC single crystals were used in electrochemical energy storage as an integrated electrode material, exhibiting superior electrochemical performance. In addition, the high-temperature supercapacitor device assembled with ionic liquids has a wide operating temperature range and maintains a capacity of 88.24% after 5000 cycles at 150 °C. The reasons for its high energy storage performance are discussed through electrochemical tests and first-principles calculation methods. This study proves that the application of SiC single crystals in supercapacitor devices has great potential in the field of high-temperature energy storage, providing a reference for the further development of novel semiconductors in the field of energy storage and optoelectronic devices.
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MEDLINE
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En
Ano de publicação:
2024
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Article