Performance comparison of flip-chip blue-light microLEDs with various passivation.

ABSTRACT

In this study, arrays of µLEDs in four different sizes (5 × 5 µm2, 10 × 10 µm2, 25 × 25 µm2, 50 × 50 µm2) were fabricated using a flip-chip bonding process. Two passivation processes were investigated with one involving a single layer of SiO2 deposited using plasma-enhanced chemical vapor deposition (PECVD) and the other incorporating Al2O3 deposited by atomic layer deposition (ALD) beneath the SiO2 layer. Owing to superior coverage and protection, the double-layers passivation process resulted in a three-order lower leakage current of µLEDs in the 5 µm chip-sized µLED arrays. Furthermore, higher light output power of µLEDs was observed in each chip-sized µLED array with double layers passivation. Particularly, the highest EQE value 21.9% of µLEDs array with 5 µm × 5 µm chip size was achieved with the double-layers passivation. The EQE value of µLEDs array was improved by 4.4 times by introducing the double-layers passivation as compared with that of µLEDs array with single layer passivation. Finally, more uniform light emission patterns were observed in the µLEDs with 5 µm × 5 µm chip size fabricated by double-layer passivation process using ImageJ software.