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Few-layer Bi2O2Se: A promising candidate for high-performance near-room-temperature thermoelectric applications.
Yip, Weng Hou; Fu, Qundong; Wu, Jing; Hippalgaonkar, Kedar; Liu, Zheng; Wang, Xingli; Boutchich, Mohamed; Tay, Beng Kang.
Afiliação
  • Yip WH; Nanyang Technological University, S1-b3a-01, Nanoelectronics Lab, 50 Nanyang Ave, Singapore, Singapore, 639798, SINGAPORE.
  • Fu Q; Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore, 639798, SINGAPORE.
  • Wu J; Agency for Science Technology and Research, Institute of Material Research and Engineering, Singapore, Singapore, 138632, SINGAPORE.
  • Hippalgaonkar K; Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, SINGAPORE.
  • Liu Z; Nanyang Technological University , 50 Nanyang Ave, 639798, Singapore, 639798, SINGAPORE.
  • Wang X; Nanyang Technological University, S1-b3a-01, Nanoelectronics Lab, 50 Nanyang Ave, Nanyang Technological University, Singapore, 639798, SINGAPORE.
  • Boutchich M; Sorbonne Universite, Laboratoire de Génie Electrique et Electronique de Paris, Paris, 75005, FRANCE.
  • Tay BK; Nanyang Technological University College of Engineering, 50 Nanyang Avenue, Singapore, 639798, SINGAPORE.
Nanotechnology ; 2024 Aug 16.
Article em En | MEDLINE | ID: mdl-39151447
ABSTRACT
Advancements in high-temperature thermoelectric materials have been substantial, yet identifying promising near-room-temperature candidates for efficient power generation from low-grade waste heat or thermoelectric cooling applications has become critical but proven exceedingly challenging. Bismuth oxyselenide (Bi2O2Se) emerges as an ideal candidate for near-room-temperature energy harvesting due to its low thermal conductivity, high carrier mobility and remarkable air-stability. In this study, the thermoelectric properties of few-layer Bi2O2Se over a wide temperature range (20 - 380 K) are investigated, where a charge transport mechanism transitioning from polar optical phonon (POP) to piezoelectric scattering at 140 K is observed. Moreover, the Seebeck coefficient (S) increases with temperature up to 280 K then stabilizes at ~-200 µV/K through 380 K. Bi2O2Se demonstrates high mobility (450 cm2V-1s-1) within the optimum power factor (PF) window, despite its T^(-1.25) dependence. The high mobility compensates the minor reduction in carrier density n2D hence contributes to maintain a robust electrical conductivity ~3x104 S/m. This results in a remarkable PF of 860 µW m-1K-2 at 280 K without the necessity for gating (Vg = 0 V), reflecting the innate performance of the as-grown material. These results underscore the considerable promise of Bi2O2Se for room temperature thermoelectric applications.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article