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Inorganic-Derived 0D Perovskite Induced Surface Lattice Arrangement for Efficient and Stable All-Inorganic Perovskite Solar Cells.
Heo, Jin Hyuck; Park, Jin Kyoung; Lee, Hyong Joon; Shin, Eun Ha; Hong, Seok Yeong; Hong, Ki-Ha; Zhang, Fei; Im, Sang Hyuk.
Afiliação
  • Heo JH; Department of Chemical and Biological Engineering, Korea University, Seoul, 02841, Republic of Korea.
  • Park JK; Department of Chemical and Biological Engineering, Korea University, Seoul, 02841, Republic of Korea.
  • Lee HJ; Department of Chemical and Biological Engineering, Korea University, Seoul, 02841, Republic of Korea.
  • Shin EH; Department of Materials Science and Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea.
  • Hong SY; Department of Chemical and Biological Engineering, Korea University, Seoul, 02841, Republic of Korea.
  • Hong KH; Department of Materials Science and Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea.
  • Zhang F; School of Chemical Engineering and Technology, Tianjin University, Tianjin, 300072, China.
  • Im SH; Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China.
Adv Mater ; : e2408387, 2024 Aug 17.
Article em En | MEDLINE | ID: mdl-39152921
ABSTRACT
The inverted inorganic CsPbI3 perovskite solar cells (PSCs) are prospective candidates for next-generation photovoltaics owing to inherent robust thermal/photo-stability and compatibility for tandems. However, the performance and stability of the inverted CsPbI3 PSCs fall behind the n-i-p counterparts due to poor energetic alignment and abundant interfacial defect states. Here, an inorganic 0D Cs4PbBr6 with a good lattice strain arrangement is implemented as the surface anchoring capping layer on CsPbI3. The Cs4PbBr6 perovskite induces enhanced electron-selective junction and thus facilitates efficient charge extraction and effectively inhibits non-radiative recombination. Consequently, the CsPbI3 PSCs with Cs4PbBr6 demonstrate the highest power conversion efficiency (PCE) of CsPbI3-based inverted PSCs, reaching 21.03% PCE from a unit cell and 17.39% PCE from a module with a 64 cm2 aperture area. Furthermore, the resulting devices retain 92.48% after 1000 h under simultaneous 1-sun and damp heat (85 °C / 85% relative humidity) environment.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Ano de publicação: 2024 Tipo de documento: Article