Optical frequency switching scheme for a high-speed broadband THz measurement system based on the photomixing technique.

This study presents an optical frequency switching scheme for a high-speed broadband terahertz (THz) measurement system based on the photomixing technique. The proposed system can achieve high-speed broadband THz measurements using narrow optical frequency scanning of a tunable laser source combined with a wavelength-switchable laser source. In addition, this scheme can provide a larger output power of an individual THz signal compared with that of a multi-mode THz signal generated by multiple CW laser sources. A swept-source THz tomography system implemented with a two-channel wavelength-switchable laser source achieves a reduced time for acquisition of a point spread function and a higher depth resolution in the same amount of measurement time compared with a system with a single optical source.

Continuous-wave THz vector imaging system utilizing two-tone signal generation and self-mixing detection.

We propose and demonstrate a continuous-wave vector THz imaging system utilizing a photonic generation of two-tone THz signals and self-mixing detection. The proposed system measures amplitude and phase information simultaneously without the local oscillator reference or phase rotation scheme that is required for heterodyne or homodyne detection. In addition, 2π phase ambiguity that occurs when the sample is thicker than the wavelength of THz radiation can be avoided. In this work, THz signal having two frequency components was generated with a uni-traveling-carrier photodiode and electro-optic modulator on the emitter side and detected with a Schottky barrier diode detector used as a self-mixer on the receiver side. The proposed THz vector imaging system exhibited a 50-dB signal to noise ratio and 0.012-rad phase fluctuation with 100-µs integration time at 325-GHz. With the system, we demonstrate two-dimensional THz phase contrast imaging. Considering the recent use of two-dimensional arrays of Schottky barrier diodes as a THz image sensor, the proposed system is greatly advantageous for realizing a real-time THz vector imaging system due to its simple receiver configuration.

All-optical single-sideband frequency upconversion utilizing the XPM effect in an SOA-MZI.

An all-optical single sideband (OSSB) frequency upconverter based on the cross-phase modulation (XPM) effect is proposed and experimentally demonstrated to overcome the power fading problem caused by the chromatic dispersion of fiber in radio-over-fiber systems. The OSSB frequency upconverter consists of an arrayed waveguide grating (AWG) and a semiconductor optical amplifier Mach-Zehnder interferometer (SOA-MZI) and does not require an extra delay line used for phase noise compensation. The generated OSSB radio frequency (RF) signal transmitted over single-mode fibers up to 20 km shows a flat electrical RF power response as a function of the fiber length. The upconverted electrical RF signal at 48 GHz shows negligible degradation of the phase noise even without an extra delay line. The measured phase noise of the upconverted RF signal (48 GHz) is -74.72 dBc/Hz at an offset frequency of 10 kHz. The spurious free dynamic range (SFDR) measured by a two-tone test to estimate the linearity of the OSSB frequency upconverter is 72.5 dB·Hz2/3.

Robust terahertz self-heterodyne system using a phase noise compensation technique.

We propose and demonstrate a robust terahertz self-heterodyne system using a phase noise compensation technique. Conventional terahertz self-heterodyne systems suffer from degraded phase noise performance due to phase noise of the laser sources. The proposed phase noise compensation technique uses an additional photodiode and a simple electric circuit to produce phase noise identical to that observed in the terahertz signal produced by the self-heterodyne system. The phase noise is subsequently subtracted from the terahertz signal produced by the self-heterodyne system using a lock-in amplifier. While the terahertz self-heterodyne system using a phase noise compensation technique offers improved phase noise performance, it also provides a reduced phase drift against ambient temperature variations. The terahertz self-heterodyne system using a phase noise compensation technique shows a phase noise of 0.67 degree in terms of a standard deviation value even without using overall delay balance control. It also shows a phase drift of as small as approximately 10 degrees in an open-to-air measurement condition without any strict temperature control.

Broadband photonic single sideband frequency up-converter based on the cross polarization modulation effect in a semiconductor optical amplifier for radio-over-fiber systems.

A broadband photonic single sideband (SSB) frequency up-converter based on the cross polarization modulation (XPolM) effect in a semiconductor optical amplifier (SOA) is proposed and experimentally demonstrated. An optical radio frequency (RF) signal in the form of an optical single sideband (OSSB) is generated by the photonic SSB frequency up-converter to solve the power fading problem caused by fiber chromatic dispersion. The generated OSSB RF signal has almost identical optical carrier power and optical sideband power. This SSB frequency up-conversion scheme shows an almost flat electrical RF power response as a function of the RF frequency in a range from 31 GHz to 75 GHz after 40 km single mode fiber (SMF) transmission. The photonic SSB frequency up-conversion technique shows negligible phase noise degradation. The phase noise of the up-converted RF signal at 49 GHz for an offset of 10 kHz is -93.17 dBc/Hz. Linearity analysis shows that the photonic SSB frequency up-converter has a spurious free dynamic range (SFDR) value of 79.51 dB · Hz(2/3).

All-optical frequency downconversion technique utilizing a four-wave mixing effect in a single semiconductor optical amplifier for wavelength division multiplexing radio-over-fiber applications.

An all-optical frequency downconversion utilizing a four-wave mixing effect in a single semiconductor optical amplifier (SOA) was experimentally demonstrated for wavelength division multiplexing (WDM) radio-over-fiber (RoF) applications. Two WDM optical radio frequency (RF) signals having 155 Mbps differential phase shift keying (DPSK) data at 28.5 GHz were simultaneously down-converted to two WDM optical intermediate frequency (IF) signals having an IF frequency of 4.5 GHz by mixing with an optical local oscillator (LO) signal having a LO frequency of 24 GHz in the SOA. The bit-error-rate (BER) performance of the RoF up-links with different optical fiber lengths employing all-optical frequency downconversion was investigated. The receiver sensitivity of the RoF up-link with a 6 km single mode fiber and an optical IF signal in an optical double-sideband format was approximately -8.5 dBm and the power penalty for simultaneous frequency downconversion was approximately 0.63 dB. The BER performance showed a strong dependence on the fiber length due to the fiber dispersion. The receiver sensitivity of the RoF up-link with the optical IF signal in the optical single-sideband format was reduced to approximately -17.4 dBm and showed negligible dependence on the fiber length.

Deep Learning-Based Multilevel Classification of Alzheimer's Disease Using Non-invasive Functional Near-Infrared Spectroscopy.

The timely diagnosis of Alzheimer's disease (AD) and its prodromal stages is critically important for the patients, who manifest different neurodegenerative severity and progression risks, to take intervention and early symptomatic treatments before the brain damage is shaped. As one of the promising techniques, functional near-infrared spectroscopy (fNIRS) has been widely employed to support early-stage AD diagnosis. This study aims to validate the capability of fNIRS coupled with Deep Learning (DL) models for AD multi-class classification. First, a comprehensive experimental design, including the resting, cognitive, memory, and verbal tasks was conducted. Second, to precisely evaluate the AD progression, we thoroughly examined the change of hemodynamic responses measured in the prefrontal cortex among four subject groups and among genders. Then, we adopted a set of DL architectures on an extremely imbalanced fNIRS dataset. The results indicated that the statistical difference between subject groups did exist during memory and verbal tasks. This presented the correlation of the level of hemoglobin activation and the degree of AD severity. There was also a gender effect on the hemoglobin changes due to the functional stimulation in our study. Moreover, we demonstrated the potential of distinguished DL models, which boosted the multi-class classification performance. The highest accuracy was achieved by Convolutional Neural Network-Long Short-Term Memory (CNN-LSTM) using the original dataset of three hemoglobin types (0.909 ± 0.012 on average). Compared to conventional machine learning algorithms, DL models produced a better classification performance. These findings demonstrated the capability of DL frameworks on the imbalanced class distribution analysis and validated the great potential of fNIRS-based approaches to be further contributed to the development of AD diagnosis systems.

All-optical frequency upconversion of a quasi optical single sideband signal utilizing a nonlinear semiconductor optical amplifier for radio-over-fiber applications.

An all-optical frequency upconversion technique using a quasi optical single sideband (q-OSSB) signal in a nonlinear semiconductor optical amplifier (NSOA) for radio-over-fiber applications is proposed and experimentally demonstrated. An optical radio frequency signal (f(RF) = 37.5 GHz) in the form of a q-OSSB signal is generated by mixing an optical intermediate frequency (IF) signal (f(IF) = 2.5 GHz) with an optical local oscillator signal (f(LO) = 35 GHz) utilizing coherent population oscillation and cross gain modulation effects in an NSOA. The phase noise, conversion efficiency, spurious free dynamic range (SFDR), and transmission characteristics of the q-OSSB signal are investigated.

All-optical single-sideband upconversion with an optical interleaver and a semiconductor optical amplifier for radio-over-fiber applications.

We propose and experimentally demonstrate an all-optical upconverter for the generation of an optical single-sideband (OSSB) signal in radio-over-fiber (RoF) systems. The OSSB signal, which is required for overcoming the fiber chromatic dispersion problem in RoF systems, is generated by using an all-optical SSB upconverter consisting of an optical interleaver and a semiconductor optical amplifier. With this upconversion technique, OSSB radio frequency (RF) signals with an RF frequency ranging from 15 GHz to 42.5 GHz are generated by mixing an optical intermediate frequency (IF) signal (1 GHz) with an optical local oscillator signal and transmitted over a 46 km standard single-mode fiber. The OSSB RF signal generated by this upconversion technique shows negligible dispersion-induced carrier suppression effects, which are usually observed for an optical double-sideband RF signal. The all-optical SSB upconverter provides high conversion efficiency of up to 29 dB and a sufficiently large spurious free dynamic range of 82 dB.Hz(2/3) for microcellular personal communication system applications.

An all-optical frequency up-converter utilizing four-wave mixing in a semiconductor optical amplifier for sub-carrier multiplexed radio-over-fiber applications.

A novel all-optical frequency up-converter utilizing four-wave mixing (FWM) in a semiconductor optical amplifier (SOA) was proposed and experimentally demonstrated. The frequency up-converter converted an optical intermediate frequency (IF) signal (f(IF) = 2.5 GHz) to an optical radio frequency (RF) signal (f(RF) = 35 and 40 GHz) through mixing with an optical local oscillator (LO) signal (f(LO) = 37.5 GHz). The up-converter showed positive conversion efficiency of 5.77 dB for the optical IF power of -22 dBm and the optical LO power of -13 dBm. This scheme showed broad bandwidths with respect to both LO and IF frequencies. The up-converter showed a phase noise of -84.5 dBc/Hz for the LO frequency of 37.5 GHz (f(LO)) and the offset frequency of 10 kHz after the frequency up-conversion.

Excimer laser deinsulation of Parylene-C on iridium for use in an activated iridium oxide film-coated Utah electrode array.

Implantable microelectrodes provide a measure to electrically stimulate neurons in the brain and spinal cord and record their electrophysiological activity. A material with a high charge capacity such as activated or sputter-deposited iridium oxide film (AIROF or SIROF) is used as an interface. The Utah electrode array (UEA) uses SIROF for its interface material with neural tissue and oxygen plasma etching (OPE) with an aluminium foil mask to expose the active area, where the interface between the electrode and neural tissue is formed. However, deinsulation of Parylene-C using OPE has limitations, including the lack of uniformity in the exposed area and reproducibility. While the deinsulation of Parylene-C using an excimer laser is proven to be an alternative for overcoming the limitations, the iridium oxide (IrOx) suffers from fracture when high laser fluence (>1000 mJ/cm2) is used. Iridium (Ir), which has a much higher fracture resistance than IrOx, can be deposited before excimer laser deinsulation and then the exposed Ir film area can be activated by electrochemical treatment to acquire the AIROF. Characterisation of the laser-ablated Ir film and AIROF by surface analysis (X-ray photoelectron spectroscopy, scanning electron microscope, and atomic force microscope) and electrochemical analysis (electrochemical impedance spectroscopy, and cyclic voltammetry) shows that the damage on the Ir film induced by laser irradiation is significantly less than that on SIROF, and the AIROF has a high charge storage capacity. The results show the potential of the laser deinsulation technique for use in high performance AIROF-coated UEA fabrication.

Morphology- and orientation-controlled gallium arsenide nanowires on silicon substrates.

GaAs nanowires were epitaxially grown on Si(001) and Si(111) substrates by using Au-catalyzed vapor-liquid-solid (VLS) growth in a solid source molecular beam epitaxy system. Scanning electron microscopy analysis revealed that almost all the GaAs nanowires were grown along <111> directions on both Si substrates for growth conditions investigated. The GaAs nanowires had a very uniform diameter along the growth direction. X-ray diffraction data and transmission electron microscopy analysis revealed that the GaAs<111> nanowires had a mixed crystal structure of the hexagonal wurtzite and the cubic zinc-blende. Current-voltage characteristics of junctions formed by the epitaxially grown GaAs nanowires and the Si substrate were investigated by using a current-sensing atomic force microscopy.