Polarization selection rules for inter-Landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect.

We report on the polarization selection rules of inter-Landau-level transitions using reflection-type optical Hall effect measurements from 600 to 4000 cm(-1) on epitaxial graphene grown by thermal decomposition of silicon carbide. We observe symmetric and antisymmetric signatures in our data due to polarization preserving and polarization mixing inter-Landau-level transitions, respectively. From field-dependent measurements, we identify that transitions in coupled graphene monolayers are governed by polarization mixing selection rules, whereas transitions in decoupled graphene monolayers are governed by polarization preserving selection rules. The selection rules may find explanation by different coupling mechanisms of inter-Landau-level transitions with free charge carrier magneto-optic plasma oscillations.

Vacuum ultra-violet spectroscopic ellipsometry study of single- and multi-phase nitride protective films.

This paper reports on a systematic investigation of the optical properties of Ta(1-x)Zr(x)N single-phase and ZrN-Ag multi-phase films fabricated by unbalanced magnetron sputtering using vacuum ultraviolet spectroscopic ellipsometry (VUV-SE). VUV-SE is a newly developed technique that was used to evaluate the strength and energy of the interband electronic excitations/transitions in these films. The energy of the interband transition was found to be altered by any changes in the elemental composition for single-phase materials. For example, it was found to increase with the increase in the covalent character of the bond as more Zr atoms are substituted for by Ta atoms in the ZrN rock-salt structure. In contrast, the peak positions did not vary in the multi-phase structures because the constituent phases were immiscible and retained their electronic structure. However, the strength and width of the interband transition were found to change to reflect changes in phase composition and microstructure. The optical and electronic properties of these materials were simulated using density functional theory (DFT) within the generalized gradient approximation. The calculated refractive indices and density of states were in good agreement with the VUV-SE data.

Physical and chemical properties of sputter-deposited TaC(x)N(y) films.

The structural, electronic, optical, and mechanical properties of stoichiometric TaC(x)N(y = 1-x) were simulated using an ab initio calculation based on density functional theory (DFT) within the generalized gradient approximation. The calculations revealed the theoretical lattice parameter, density of states, refractive index, and elastic constants as a function of carbon and nitrogen content. TaC(x)N(y) films were subsequently produced on Si wafers using unbalanced magnetron sputtering. The structural, optical, and mechanical properties were measured using x-ray diffraction/transmission electron microscopy, vacuum ultraviolet spectroscopic ellipsometry, and nanoindentation, respectively. The computational and experimental properties were compared. The lattice parameter, the energy of the 2p bands in the density of states, and the energy of the interband transitions were found to decrease with increasing C content. No significant changes in the elastic constants were observed as a result of substituting N atoms with C atoms. The hardness and the elastic modulus were in the 40 and 380 GPa range, respectively. The experimental Young's modulus was much smaller than the computational one and this discrepancy was attributed to the nanocrystalline nature of the films. Also, the elastic constants were found to decrease dramatically for over-stoichiometric films.

UV-vis-infrared optical and AFM study of spin-cast chitosan films.

Optical properties of spin-cast chitosan films have been determined in the infrared, visible, and ultraviolet region of the spectrum using spectroscopic ellipsometry. Optical constants for the UV-vis-near IR spectra from 130 to 1700 nm were determined using Cauchy dispersion forms combined with Lorentzian oscillator models in the absorptive shorter wavelength regions. Infrared index of refraction and extinction coefficients from 750 to 4000 cm(-1) were determined using ellipsometric data fits to dispersion models based on harmonic oscillators. This modeling determined that optical anisotropy was present and measurable over all wavelength regions of ellipsometric data. To obtain information on the micro- and nano-scale surface structure, tapping mode atomic force microscopy (AFM) imaging was employed to determine morphology and roughness information of dry spin-cast chitosan films.

Infrared optical properties and AFM of spin-cast chitosan films chemically modified with 1,2 Epoxy-3-phenoxy-propane.

Chemical modification of spin-cast chitosan films has been performed. This modification involves the attachment of 1,2 Epoxy-3-phenoxy-propane, commonly known as glycidyl phenyl ether (GPE), to the amine group of the chitosan molecule. Optical properties of modified films have been determined in the infrared region of the spectrum using spectroscopic ellipsometry, and are reported in this paper. Special attention is paid to the infrared region where the index of refraction and extinction coefficients from 750 to 4000 cm(-1) were determined. Difference plots of IR optical data before and after chemical modification were generated to confirm that modification had occurred. Optical modeling of infrared spectroscopic ellipsometry (IRSE) data with respect to chemical bond vibrations has also been performed. This modeling involved curve fitting of resonant chemical bond absorptions using Lorentz oscillators. These oscillator models allow for comparison of modified chitosan to unmodified chitosan. The purpose of this research was to determine infrared optical constants of chemically modified chitosan films This work shows that surface chemistry of biomaterials can be studied quite sensitively with spectroscopy ellipsometry, detecting as little as 100 ng/cm(2) of GPE.

Improved apparatus for trapped radical and other studies down to 1.5 K.

This note describes a Dewar system and associated apparatus for trapped free radical and other studies at temperatures down to 1.5 K. Cylindrical and rectangular microwave cavities can be used.

Invited article: An integrated mid-infrared, far-infrared, and terahertz optical Hall effect instrument.

We report on the development of the first integrated mid-infrared, far-infrared, and terahertz optical Hall effect instrument, covering an ultra wide spectral range from 3 cm(-1) to 7000 cm(-1) (0.1-210 THz or 0.4-870 meV). The instrument comprises four sub-systems, where the magneto-cryostat-transfer sub-system enables the usage of the magneto-cryostat sub-system with the mid-infrared ellipsometer sub-system, and the far-infrared/terahertz ellipsometer sub-system. Both ellipsometer sub-systems can be used as variable angle-of-incidence spectroscopic ellipsometers in reflection or transmission mode, and are equipped with multiple light sources and detectors. The ellipsometer sub-systems are operated in polarizer-sample-rotating-analyzer configuration granting access to the upper left 3 × 3 block of the normalized 4 × 4 Mueller matrix. The closed cycle magneto-cryostat sub-system provides sample temperatures between room temperature and 1.4 K and magnetic fields up to 8 T, enabling the detection of transverse and longitudinal magnetic field-induced birefringence. We discuss theoretical background and practical realization of the integrated mid-infrared, far-infrared, and terahertz optical Hall effect instrument, as well as acquisition of optical Hall effect data and the corresponding model analysis procedures. Exemplarily, epitaxial graphene grown on 6H-SiC, a tellurium doped bulk GaAs sample and an AlGaN/GaN high electron mobility transistor structure are investigated. The selected experimental datasets display the full spectral, magnetic field and temperature range of the instrument and demonstrate data analysis strategies. Effects from free charge carriers in two dimensional confinement and in a volume material, as well as quantum mechanical effects (inter-Landau-level transitions) are observed and discussed exemplarily.

Variable-wavelength frequency-domain terahertz ellipsometry.

We report an experimental setup for wavelength-tunable frequency-domain ellipsometric measurements in the terahertz spectral range from 0.2 to 1.5 THz employing a desktop-based backward wave oscillator source. The instrument allows for variable angles of incidence between 30 degrees and 90 degrees and operates in a polarizer-sample-rotating analyzer scheme. The backward wave oscillator source has a tunable base frequency of 107-177 GHz and is augmented with a set of Schottky diode frequency multipliers in order to extend the spectral range to 1.5 THz. We use an odd-bounce image rotation system in combination with a wire grid polarizer to prepare the input polarization state. A highly phosphorous-doped Si substrate serves as a first sample model system. We show that the ellipsometric data obtained with our novel terahertz ellipsometer can be well described within the classical Drude model, which at the same time is in perfect agreement with midinfrared ellipsometry data obtained from the same sample for comparison. The analysis of the terahertz ellipsometric data of a low phosphorous-doped n-type Si substrate demonstrates that ellipsometry in the terahertz spectral range allows the determination of free charge-carrier properties for electron concentrations as low as 8x10(14) cm(-3).

Explicit solutions for the optical properties of arbitrary magneto-optic materials in generalized ellipsometry.

Analytic expressions for the eigenvalues for the four-wave components at an oblique angle of light incidence inside a randomly oriented anisotropic magneto-optic dielectric medium are reported explicitly. In particular, these solutions are valid as long as the dielectric function tensor consists of a symmetric and an antisymmetric part. The normalized Jones reflection and transmission coefficients, i.e., the generalized ellipsometric parameters of homogeneously layered systems having nonsymmetric dielectric properties, are obtained immediately from a recently reviewed 4 x 4 matrix approach. Our explicit solutions allow a future analysis of the generalized ellipsometric data of multilayered magneto-optic media regardless of the orientation of the material magnetization and crystalline axes and the angle of light incidence. Possible experimental thin-film situations are discussed in terms of generalized ellipsometric parameters and illustrated for birefringent free-carrier effects in heavily doped semiconductor thin films and for oblique magnetization directions in magneto-optic multilayer systems.

Infrared ellipsometry characterization of porous silicon bragg reflectors.

We investigate porous silicon Bragg reflectors in a nondestructive manner using variable angle-of-incidence infrared spectroscopic ellipsometry. In addition to the thickness, volume porosity, inhomogeneity, and optical anisotropy, properties of the solid content of the porous material are investigated in terms of dielectric function and surface chemistry. The material was found to have positive birefringence. The high sensitivity of the technique is employed to detect and identify infrared resonant absorptions related to different Si-H as well as Si-O-Si vibrational modes. The average electrical resistivity of the solid content of the porous material is determined to be 0.03 Omega cm, which is larger than the corresponding bulk value of 0.019 Omega cm. Furthermore the average carrier concentration in the porous material shows a decrease from 6.2 x 10(18) cm(-3) to 4 x 10(18) cm(-3).