Band gap opening of metallic single-walled carbon nanotubes via noncovalent symmetry breaking.

Covalent bonding interactions determine the energy-momentum (E-k) dispersion (band structure) of solid-state materials. Here, we show that noncovalent interactions can modulate the E-k dispersion near the Fermi level of a low-dimensional nanoscale conductor. We demonstrate that low energy band gaps may be opened in metallic carbon nanotubes through polymer wrapping of the nanotube surface at fixed helical periodicity. Electronic spectral, chiro-optic, potentiometric, electronic device, and work function data corroborate that the magnitude of band gap opening depends on the nature of the polymer electronic structure. Polymer dewrapping reverses the conducting-to-semiconducting phase transition, restoring the native metallic carbon nanotube electronic structure. These results address a long-standing challenge to develop carbon nanotube electronic structures that are not realized through disruption of π conjugation, and establish a roadmap for designing and tuning specialized semiconductors that feature band gaps on the order of a few hundred meV.

Ultracoherent Gigahertz Diamond Spin-Mechanical Lamb Wave Resonators.

We report the development of an all-optical approach that excites the fundamental compression mode in a diamond Lamb wave resonator with an optical gradient force and detects the induced vibrations via strain coupling to a silicon vacancy center, specifically, via phonon sidebands in the optical excitation spectrum of the silicon vacancy. Sideband optical interferometry has also been used for the detection of in-plane mechanical vibrations, for which conventional optical interferometry is not effective. These experiments demonstrate a gigahertz fundamental compression mode with a Q factor of >107 at temperatures near 7 K, providing a promising platform for reaching the quantum regime of spin mechanics, especially phononic cavity quantum electrodynamics of electron spins.

Giant Flexoelectricity in Bent Semiconductor Thinfilm.

We elucidate the flexoelectricity of semiconductors in the high strain gradient regime, the underlying mechanism of which is less understood. By using the generalized Bloch theorem, we uncover a strong flexoelectric-like effect in bent thinfilms of Si and Ge due to a high-strain-gradient-induced band gap closure. We show that an unusual type-II band alignment is formed between the compressed and elongated sides of the bent film. Therefore, upon the band gap closure, electrons transfer from the compressed side to the elongated side to reach the thermodynamic equilibrium, leading to a pronounced change of polarization along the film thickness dimension. The obtained transverse flexoelectric coefficients are unexpectedly high with a quadratic dependence on the film thickness. This new mechanism is extendable to other semiconductor materials with moderate energy gaps. Our findings have important implications for the future applications of flexoelectricity in semiconductor materials.

Unveiling Variations in Electronic and Atomic Structures Due to Nanoscale Wurtzite and Zinc Blende Phase Separation in GaAs Nanowires.

Phase separation is an intriguing phenomenon often found in III-V nanostructures, but its effect on the atomic and electronic structures of III-V nanomaterials is still not fully understood. Here we study the variations in atomic arrangement and band structure due to the coexistence of wurtzite (WZ) and zinc blende (ZB) phases in single GaAs nanowires by using scanning transmission electron microscopy and monochromated electron energy loss spectroscopy. The WZ lattice distances are found to be larger (by ∼1%), along both the nanowire length direction and the perpendicular direction, than the ZB lattice. The band gap of the WZ phase is ∼20 meV smaller than that of the ZB phase. A shift of ∼70 meV in the conduction band edge between the two phases is also found. The direct and local measurements in single GaAs nanowires reveal important effects of phase separation on the properties of individual III-V nanostructures.

Modulating Narrow Bandgap in a Diacetylene Functionalized Woven Covalent Organic Framework as a Visible Light Responsive Photocatalyst.

Woven covalent organic frameworks (COF) possess three dimensional frameworks with spatially isolated Cu(I) centers and have promising optoelectronic properties because of metal to ligand charge transfer (MLCT). However, despite their potential, woven COFs have not yet been investigated as photocatalysts. In this study, we developed a new woven COF, Cu-PhenBDA-COF, functionalized with diacetylene bonds. Cu-PhenBDA-COF was fully characterized, and the optoelectronic and photocatalytic properties were compared to previously reported Cu-COF-505. The diacetylene bonds of the linker positively impacted the optoelectronic properties of Cu-PhenBDA-COF and resulted in a narrower band gap and better charge separation efficiency. When the Cu(I) center was removed from both woven COFs, the absorption edge was blue shifted, resulting in a wider band gap, and there was a considerable decrease in the charge separation efficiency, underscoring the pivotal role of MLCT. This trend was reflected in the photocatalytic activity of the woven COFs toward the degradation of sulfamethoxazole in water, where the highest reaction rate constant (k app ) was recorded for the metallated diacetylene functionalized woven COF, Cu-PhenBDA-COF.

Engineering Ba2Bi2O6 Double Perovskite with La3+ for High Current Density Visible Light Photoelectrochemical Hydrogen Evolution.

A Lanthanum ion (La3+) incorporation strategy is implemented to modify Ba2Bi2O6-based double perovskite photoelectrodes. X-ray diffraction (XRD) characterization shows that highly crystalline Ba2La0.4Bi1.6O6 double perovskites with the space group I2/m are successfully prepared. UV-vis absorption spectra and the Tauc-plot reveal an optical band gap Eg ≈1.57 ± 0.01 eV. A thickness dependence of the photoelectrodes photoelectrochemical (PEC) performance shows that the submicron (≈1 µm) 4-times spin-coated thin film photoelectrode displays strong p-type conductivity, which delivers an encouraging photocurrent density of 0.88 mA cm-2 at 0.25 VRHE under AM 1.5G illumination. 10-times coated and 20-times coated medium thick (125.8-197 µm) photoelectrodes that exhibit moderate p-type conductivity, show further enhanced photocurrent densities of 1.5 mA cm-2 at 0 VRHE. In contrast, charge recombination centers existing in a standard thick pellet (≈500 µm) Ba2La0.4Bi1.6O6 photoelectrode can quench photo-generated charge carriers and greatly undermine PEC activities. The approach to doping at the Bi(III) sites contrasts with earlier efforts that focus on doping at the Bi(V) sites and thus paves the way for further tailoring a family of novel promising photocathode materials for efficient solar-water conversion devices.

Direct Band Gap Semiconductors with Two- and Three-Dimensional Triel-Phosphide Frameworks (Triel=Al, Ga, In).

Recently, several ternary phosphidotrielates and -tetrelates have been investigated with respect to their very good ionic conductivity, while less focus was pointed towards their electronic structures. Here, we report on a novel series of compounds, in which several members possess direct band gaps. We investigated the known compounds Li3AlP2, Li3GaP2, Li3InP2, and Na3InP2 and describe the synthesis and the crystal structure of novel Na3In2P3. For all mentioned phosphidotrielates reflectance UV-Vis measurements reveal direct band gaps in the visible light region with decreasing band gaps in the series: Li3AlP2 (2.45 eV), Li3GaP2 (2.18 eV), Li3InP2 (1.99 eV), Na3InP2 (1.37 eV), and Na3In2P3 (1.27 eV). All direct band gaps are confirmed by quantum chemical calculations. The unexpected property occurs despite different structure types. As a common feature all compounds contain EP4 tetrahedra, which share exclusively vertices for E=In and vertices as well as edges for E=Al and Ga. The structure of the novel Na3In2P3 is built up by a polyanionic framework of six-membered rings of corner-sharing InP4 tetrahedra. As a result, the newly designed semiconductors with direct band gaps are suitable for optoelectronic applications, and they can provide significant guidance for the design of new functional semiconductors.

Electronic Structure Analysis of the A10Tt2P6 System (A=Li-Cs; Tt=Si, Ge, Sn) and Synthesis of the Direct Band Gap Semiconductor K10Sn2P6.

Investigating the relationship between atomic and electronic structures is a powerful tool to screen the wide variety of Zintl phases for interesting (opto-)electronic properties. To get an insight in such relations, the A10Tt2P6 system (A=Li-Cs; Tt=Si-Sn) was picked as model system to analyse the influence of structural motives, combination of elements and their properties on type and width of the band gaps. Those compounds comprise two interesting structural motives of their anions, which are either monomeric trigonal planar TtP3 5- units which are isostructural to CO3 2- or [Tt2P6]10- dimers which correspond to two edge-sharing TtP4 tetrahedra. The A10Tt2P6 compounds were structurally optimized for both polymorphs and subsequent frequency analysis, band structure as well as density of states calculations were performed. The Gibbs free energies were compared to determine temperature dependent stability, where Na10Si2P6, Na10Ge2P6 and K10Sn2P6 were found to be candidates for a high temperature phase transition between the two polymorphs. Additionally, the unknown, but predicted compound K10Sn2P6 was synthesized and characterized by single crystal and powder x-ray diffraction. It crystalizes in the monoclinic space group P 21/n and incorporates [Sn2P6]10- edge sharing double tetrahedra. It was determined to be a direct band gap semiconductor with a band gap of 2.57 eV.

Tuning Properties of Layered Materials Based on Hexagonal Boron Nitride by Methylation: A Density Functional Theory Study.

In this work, the rational design of optoelectronic properties of two-dimensional materials based on hexagonal boron nitride (h-BN) by functionalization by methyl (CH3) groups is proposed. Using density functional theory, we examine the functionalization of single- or double-layer systems with either CH3 radicals alone or with both CH3 (cations) and chlorine (anions), i. e., under conditions of homolytic or heterolytic splitting of CH3Cl precursor molecules, respectively. Different degrees of methylation (coverages) are considered. The methylation of pure h-BN leads to a reduction of the band gap, while in h-BN/G heterostructures (with methylated graphene layer), methylation increases the band gap. As a consequence, h-BN/G heterostructures offer a high tunability of their optoelectronic properties. To guide possible experiments, vibrational properties and spectra of methylated h-BN and methylated h-BN/G are determined.

Density functional theory for doped TiO2: current research strategies and advancements.

Since the inception of the density functional theory (DFT) by Hohenberg and Kohn in 1964, it rapidly became an indispensable theoretical tool across various disciplines, such as chemistry, biology, and materials science, among others. This theory has ushered in a new era of computational research, paving the way for substantial advancements in fundamental understanding. Today, DFT is routinely employed for a diverse range of applications, such as probing new material properties and providing a profound understanding of the mechanisms underlying physical, chemical, and biological processes. Even after decades of active utilization, the improvement of DFT principles has never been slowed down, meaning that more accurate theoretical results are continuously generated with time. This work highlights the latest achievements acquired by DFT in the specific research field, namely the theoretical investigations of doped TiO2systems, which have not been comprehensively reviewed and summarized yet. Successful progress in this niche is currently hard to imagine without the support by DFT. It can accurately reveal new TiO2properties after introducing the desired dopant and help to find the optimal system design for a specific application prior to proceeding to more time-consuming and expensive experimental research. Hence, by evaluating a selection of the most recent research studies, we aim to highlight the pertinent aspects of DFT as they relate to the study of doped TiO2systems. We also aim to shed light on the strengths and weaknesses of DFT and present the primary strategies employed thus far to predict the properties of various doped TiO2systems reliably.

Structural and Photometric Study of cool White Light Emitting Dy(III) Complexes Sensitized with ß-diketone for Lighting Applications.

The present paper reports synthesis of five Dy(III) complexes with bidentate ligand (3-benzylidene-2,4-pentanedione) and auxiliary ligands i.e. 2,2'-bipyridyl (bipy), 4,4'-dimethyl-2,2'-bipyridyl (dmbipy), neocuproine (neo) and 1,10-phenanthroline (phen). The structural and photometric parameters of the complexes were investigated through 1H NMR, energy dispersive X-ray analysis, Fourier transform infrared, photoluminescence and ultra-violet visible spectroscopy. The optical energy gap values validated their role in semiconducting devices. These complexes exhibit suitable thermal stability revealing their utility in fabrication of white OLEDs. The emission profile of Dy(III) complexes displayed peaks at 575 nm (yellow emission) and 484 nm (blue emission) accredited to 4F9/2→4H13/2,15/2 transitions of dysprosium ion. The decay curve exhibit monoexponential behaviour suggesting the existence of one luminescent centre in dysprosium complexes. Moreover, their CCT and CIE coordinates value authenticate them as cool white light emitting complexes.

Investigations on Chemically Synthesized Pure and Doped Manganese Dioxide Nanoparticles for Dye Removal and Photocatalytic Applications.

Pure and Mg2+, Ni2+, Cd2+ doped MnO2 nanoparticles were synthesized by chemical co-precipitation method. These samples were characterised by PXRD, SEM, EDX, FTIR, UV-Vis-NIR, PL, Antibacterial, Cyclic Voltammetry, Dye Degradation and Photocatalytic studies. From the powder XRD studies, the crystallite size of the particle was calculated using Scherer formula and found that the synthesized nanoparticles were in the range from 10 to 12 nm. The morphology of all the synthesized samples was viewed from SEM micrograph. The composition and purity of the samples were identified from EDX studies. In FTIR spectra metal-oxygen stretching and bending modes of vibrations were observed. From the absorption spectra of UV-Vis optical analysis values of absorption coefficient, extinction coefficient, refractive index, real and imaginary part of optical dielectric constant and optical conductivity were compared. The band gap energy obtained from Tauc's plot varies from 1.21 to 1.51 eV exhibits semiconducting behaviour of all the synthesized samples. Investigations on photoluminecsence spectrum reveals blue shift in wavelength for doped nanooxides compared to pure MnO2. Antimicrobial activity of synthesised samples against gram positive and gram negative bacteria was determined. The obtained results reveal very high bacterial resistance in Cd2+ doped MnO2 nanoparticles with higher activity towards bacterial resistance compared to standard drug. The specific capacitance values were determined from Cyclic Voltammetry studies. Using the batch method of dye removing technique the percentage of malachite green dye removal was calculated. Also the photocatalytic efficiency of all the synthesized MnO2 samples in removing malachite green dye was studied by exposing to sunlight for different dosage and contact time. Ni2+ doped MnO2 shows relatively higher % of dye degradation capacity about 93% for 0.1 g of dosage of photocatalysts.

Study of Concentration Quenching and Energy Transfer Mechanism in Ce Doped Y2O3 Nanomaterials.

We study concentration quenching and energy transfer mechanisms of yttrium oxide (Y2O3) nanomaterials doped with different concentrations (0-5 mol%) of cerium (Ce). Photoluminescence (PL) spectra recorded under an excitation wavelength of 350 nm show a broad emission band at ∼ 406 nm and a feeble emission band at ∼ 463 nm in the undoped Y2O3 sample. The doping of Ce in Y2O3 induced multiple PL peaks within the blue-green region of the spectrum in all the doped samples with the peak at ∼ 466 nm being notably the prominent one. This prominent emission band exhibits a decrease in intensity with increasing Ce concentration due to concentration quenching. Analysis of Time-resolved photoluminescence (TRPL) spectra reveal that the average emission lifetime of Ce-doped Y2O3 is shorter than that of the undoped Y2O3 sample. The concentration quenching effect and the decrease of average emission lifetime of the dominant emission band are explained on the basis of energy transfer from the host Y2O3 to the Ce3+ ion centres. The critical quenching concentration of Ce3+ ion in Y2O3:Ce phosphor was identified to be 1 mol% and the critical transfer distance was estimated to be 23.74 Å. Analysis reveal that the concentration quenching mechanism involves nearest-neighbour interaction.

Green Synthesis of Highly Fluorescent NCQDs: A Comprehensive Study on Synthesis, Characterization, Photophysical Properties, pH Sensing, Heavy Metal Detection, and Solvatochromic Behavior through Hydrothermal Method.

Solvatochromic studies in conjunction with NCQDs and analysis of material at different pH levels provide valuable insights about the process of metal ion sensing. Metal ion sensing holds significant importance in various fields like environment monitoring, biomedical diagnostics and various industrial purpose. The detection of metal ions by mixing the nitrogen-doped quantum dots (NCQDs) in the solvent at different pH levels for the analysis of the photoluminescence spectra is the unique property to achieve selective metal ion detection. In present study, the synthesis of NCQDs was performed by the use of flowers of Tecoma stans. The synthesis of NCQDs to best of our knowledge using flowers of Tecoma stans as natural carbon source via hydrothermal process has been done for the first time. The NCQDs exhibit absorption bands ranging from 190 to 450 nm, with the energy band gap varying from 3.55 to 5.42 eV when mixed with different solvent such as, 1-4 dioxane, acetone, acetonitrile, ethyl- acetate, ethanol, methanol and toluene. The fluorescence spectra exhibited highly intense range from approximately 390 to 680 nm across various solvents. XRD analysis further confirmed the crystalline nature of the particles with an average size of 6.96 nm. Different peak positions of the FTIR spectra support functional groups having C-H stretching, C = O (carbonyl) stretching, and C = C stretching vibrations. In the study a notable solvatochromic shift was observed, indicating sensitivity to change in solvent polarity. Additionally, the investigation of the ratio of ground to excited state dipole moment based on solvatochromic shift yielded a value of 3.30. This provide valuable information about optical and electronic properties of NCQDs. Overall, our study sheds light on the unique properties of NCQDs synthesized from Tecoma stans flowers and their potential applications in metal ion sensing, pH probing, and solvent polarity studies.

Synthesis, Spectral Characterization and Photoluminescence of 3-chloro-6-methoxy-2-(methylsulfanyl)quinoxaline in Different Solvents: An Experimental and Theoretical Investigation Using DFT.

In the present work, we synthesized 3-chloro-6-methoxy-2-(methyl sulfanyl) quinoxaline (3MSQ) using a microwave-assisted synthesis method. The physicochemical structural analysis of the synthesized compound utilizing 1H-NMR, 13C-NMR, and FT-IR spectroscopy techniques. The photophysical properties of 3MSQ was examined through absorption and fluorescence spectroscopy. Spectroscopic analyses revealed a bathochromic shift in both absorption and fluorescence spectra, attributed to the π → π* transition. Ground and excited state dipole moments was experimentally determined using the solvatochromic shift method, employing various correlations such as Lippert's, Bakhshiev's, Kawski-Chamma-Viallet's equations, and solvent polarity parameters. Our findings indicate that the excited state dipole moments exceed those of the ground state, suggesting increased polarity in the excited state. Further, the while detailed bond length, bond angles, dihedral angles, Mulliken charge distribution, ground state dipole moments and HOMO-LUMO energy gap estimated through ab initio computations using Gaussian-09W. The value of energy band gap obtained from both the methods are in good agreement. Furthermore, employing DFT computational analysis, we identified reactive centers such as electrophilic and nucleophilic sites using molecular electrostatic potential (MESP) 3D plots. Additionally, CIE chromaticity analysis was performed to understand the photoluminescent properties of 3MSQ. The insights derived from these analyses contribute to a better understanding of the molecule's electronic structure, photophysical properties, and solute-solvent interactions, thus providing valuable information regarding its behaviour and characteristics under diverse conditions. These results contribute to a comprehensive understanding of the molecular structure and properties of 3-chloro-6-methoxy-2-(methyl sulfanyl) quinoxaline (3MSQ).

Band gaps of crystalline solids from Wannier-localization-based optimal tuning of a screened range-separated hybrid functional.

Accurate prediction of fundamental band gaps of crystalline solid-state systems entirely within density functional theory is a long-standing challenge. Here, we present a simple and inexpensive method that achieves this by means of nonempirical optimal tuning of the parameters of a screened range-separated hybrid functional. The tuning involves the enforcement of an ansatz that generalizes the ionization potential theorem to the removal of an electron from an occupied state described by a localized Wannier function in a modestly sized supercell calculation. The method is benchmarked against experiment for a set of systems ranging from narrow band-gap semiconductors to large band-gap insulators, spanning a range of fundamental band gaps from 0.2 to 14.2 electronvolts (eV), and is found to yield quantitative accuracy across the board, with a mean absolute error of ∼0.1 eV and a maximal error of ∼0.2 eV.

Ho3+ -doped BaGd2 ZnO5 green-emitting phosphor for solid-state lighting: synthesis, characterization, and photoluminescence properties.

In this work, we present the synthesis of a green-emitting series of BaGd2 ZnO5 :xHo3+ (0.5-3 mol%) phosphors using a high-temperature solid-state reaction method. Phase purity and crystal structure information were evaluated through X-ray powder diffraction patterns. Optical properties were examined through diffuse reflectance spectra, revealing that the prepared phosphor exhibited a band gap of 4.65 eV. The effect of Ho3+ doping on the morphology and ion distribution on the surface was assessed using scanning electron microscopy and time-of-flight secondary ion mass spectrometry techniques, respectively. The excitation spectra of the synthesized phosphor exhibited a charge transfer band and strong absorption transitions. The emission spectra displayed typical holmium emission characteristics, featuring a strong green emission band associated with f-f transitions from 5 F4 + 2 S2 → 5 I8 . Decay dynamics of the synthesized phosphor exhibited a single-exponential decay pattern, with lifetimes ranging from 0.103 to 0.053 ms. The intrinsic radiative lifetime, calculated through Auzel's fitting was determined to be 0.14 ms. Using the emission spectra, colorimetric behaviour was analyzed, revealing that the Commission Internationale de l'éclairage (CIE) coordinates exclusively lay within the green region at (0.285, 0.705), with an impressive colour purity of 99.6%. Given these marked properties, the synthesized phosphor exhibits great potential for a wide range of green-emitting applications, including displays, white light-emitting diodes, and security signage.

Effect of Ag and Ni-Doped Cerium Oxide Nanoparticles on the Formation of ROS and Evaluation as an Alternative Physical Sunscreen Material.

CeO2 nanoparticles (nanoceria) were proposed as an alternative physical sunscreen agent with antioxidant properties and comparable UV absorption performance. Green synthesis of nanoceria with Ag and Ni dopants resulted in doped nanoceria with lower catalytic activity and biologically-safe characteristics. The doped nanoceria was characterized using X-ray diffraction (XRD), transmission electron microscopy (TEM), Rancimat Instrument, and UV-Vis Spectrophotometer for SPF (Sun Protection Factor) determination. XRD and TEM analysis showed that nanoceria had been successfully formed in nanoscale-sized with a change in crystallite size due to the crystal defect phenomenon caused by dopant addition. While the Rancimat test and band gap energy analysis were conducted to evaluate the oxidative stability and reactive oxygen species formation, it was confirmed that dopant addition could decrease catalytic activity of material, resulting in Ni-doped Ce with a longer incubation time (11.81 h) than Ag-doped Ce (10.58 h) and non-doped Ce (10.30 h). In-vitro SPF value was measured using the thin layer technique of sunscreen prototype with Virgin Coconut Oil (VCO)-based emulsion, which yielded 10.862 and 5.728 SPF values for 10% Ag-doped Ce and 10% Ni-doped Ce, respectively. The dopant addition of nanoceria could reduce catalytic activity and give a decent in vitro UV-shielding performance test; thus, Ag and Ni-doped nanoceria could be seen as promising candidates for alternative physical sunscreen agents.

Chipless RFID Sensor for Measuring Time-Varying Electric Fields Using a Contactless Air-Filled Substrate-Integrated Waveguide Resonator.

This paper presents a wireless chipless resonator-based sensor for measuring the absolute value of an external time-varying electric field. The sensor is developed using contactless air-filled substrate-integrated waveguide (CLAF-SIW) technology. The sensor employs a low-impedance electromagnetic band gap structure to confine the electric field within the sensor's air cavity. The air cavity is loaded with varactor diodes whose reverse bias voltage is modified by the to-be-measured external electric field. Variation in the external electric field results in a variation of the sensor's resonant frequency. The CLAF-SIW sensor offers a high unloaded quality factor, which is required for a long-distance ringback-based interrogation system. A prototype of the proposed sensor is fabricated and tested. It can measure a time-varying external electric field up to 6.9 kV/m, has a sensitivity of 1.86 (kHz)/(V/m), and can be interrogated from a distance of 80 cm. The feasible maximum bandwidth of the external electric field is 25 kHz. The proposed sensor offers a compact planar multilayer structure that can easily be incorporated with a planar antenna and its size can be reduced by selecting a higher operating frequency without an increase in dielectric loss.

Layer-Dependent Interaction Effects in the Electronic Structure of Twisted Bilayer Graphene Devices.

Near the magic angle, strong correlations drive many intriguing phases in twisted bilayer graphene (tBG) including unconventional superconductivity and chern insulation. Whether correlations can tune symmetry breaking phases in tBG at intermediate (≳ 2°) twist angles remains an open fundamental question. Here, using ARPES, we study the effects of many-body interactions and displacement field on the band structure of tBG devices at an intermediate (3°) twist angle. We observe a layer- and doping-dependent renormalization of bands at the K points that is qualitatively consistent with moiré models of the Hartree-Fock interaction. We provide evidence of correlation-enhanced inversion symmetry-breaking, manifested by gaps at the Dirac points that are tunable with doping. These results suggest that electronic interactions play a significant role in the physics of tBG even at intermediate twist angles and present a new pathway toward engineering band structure and symmetry-breaking phases in moiré heterostructures.