Role of Defects in the Breakdown Phenomenon of Al1-xScxN: From Ferroelectric to Filamentary Resistive Switching.

Aluminum scandium nitride (Al1-xScxN), with its large remanent polarization, is an attractive material for high-density ferroelectric random-access memories. However, the cycling endurance of Al1-xScxN ferroelectric capacitors is far below what can be achieved in other ferroelectric materials. Understanding the nature and dynamics of the breakdown mechanism is of the utmost importance for improving memory reliability. The breakdown phenomenon in ferroelectric Al1-xScxN is proposed to be an impulse thermal filamentary-driven process along preferential defective pathways. For the first time, stable and robust bipolar filamentary resistive switching in ferroelectric Al1-xScxN is reported. A hot atom damage defect generation model illustrates how filament formation and ferroelectric switching are connected. The model reveals the tendency of the ferroelectric wurtzite-type Al1-xScxN system to reach internal symmetry with bipolar electric field cycling. Defects generated from bipolar electric field cycling influence both the energy barrier between the polarization states and that required for the filament formation.

Finding Natural, Dense, and Stable Frustrated Lewis Pairs on Wurtzite Crystal Surfaces for Small-Molecule Activation.

The surface frustrated Lewis pairs (SFLPs) open up new opportunities for substituting noble metals in the activation and conversion of stable molecules. However, the applications of SFLPs on a larger scale are impeded by the complex construction process, low surface density, and sensitivity to the reaction environment. Herein, wurtzite-structured crystals such as GaN, ZnO, and AlP are found for developing natural, dense, and stable SFLPs. It is revealed that the SFLPs can naturally exist on the (100) and (110) surfaces of wurtzite-structured crystals. All the surface cations and anions serve as the Lewis acid and Lewis base in SFLPs, respectively, contributing to the surface density of SFLPs as high as 7.26×1014 cm-2. Ab initio molecular dynamics simulations indicate that the SFLPs can keep stable under high temperatures and the reaction atmospheres of CO and H2O. Moreover, outstanding performance for activating the given small molecules is achieved on these natural SFLPs, which originates from the optimal orbital overlap between SFLPs and small molecules. Overall, these findings not only provide a simple method to obtain dense and stable SFLPs but also unfold the nature of SFLPs toward the facile activation of small molecules.

Synthesis and Comprehensive Studies of Be-IV-N2 (IV=Si, Ge): Solving the Mystery of Wurtzite-Type Pmc21 Structures.

The research for wurtzite-type ternary nitride semiconductors containing earth abundant elements with a stoichiometry of 1 : 1 : 2 was focused on metals like Mg or Zn, so far. The vast majority of these Grimm-Sommerfeld analogue compounds crystallize in the ß-NaFeO2 structure, although a second arrangement in space group Pmc21 is predicted to be a viable alternative. Despite extensive theoretical and experimental studies, this structure has so far remained undiscovered. Herein, we report on BeGeN2 in a Pmc21 structure, synthesized from Be3N2 and Ge3N4 using a high-pressure high-temperature approach at 6 GPa and 800 °C. The compound was characterized by powder X-ray diffraction (PXRD), solid state nuclear magnetic resonance (NMR), Raman and energy dispersive X-ray (EDX) spectroscopy, temperature-dependent PXRD, second harmonic generation (SHG) and UV/Vis measurements and in addition also compared to its lighter homologue BeSiN2 in all mentioned analytic techniques. The synthesis and investigation of both the first beryllium germanium nitride and the first ternary wurtzite-type nitride crystallizing in space group Pmc21 open the door to a new field of research on wurtzite-type related structures.

High-Speed and High-Power Ferroelectric Switching Current Measurement Instrument for Materials with Large Coercive Voltage and Remanent Polarization.

A high-speed and high-power current measurement instrument is described for measuring rapid switching of ferroelectric samples with large spontaneous polarization and coercive field. Instrument capabilities (±200 V, 200 mA, and 200 ns order response) are validated with a LiTaO3 single crystal whose switching kinetics are well known. The new instrument described here enables measurements that are not possible using existing commercial measurement systems, including the observation of ferroelectric switching in large coercive field and large spontaneous polarization Al0.7Sc0.3N thin films.

Luminescent Anisotropic Wurtzite InP Nanocrystals.

Indium phosphide (InP) nanocrystals are emerging as an alternative to heavy metal containing nanocrystals for optoelectronic applications but lag behind in terms of synthetic control. Herein, luminescent wurtzite InP nanocrystals with narrow size distribution were synthesized via a cation exchange reaction from hexagonal Cu3P nanocrystals. A comprehensive surface treatment with NOBF4 was performed, which removes excess copper while generating stoichiometric In/P nanocrystals with fluoride surface passivation. The attained InP nanocrystals manifest a highly resolved absorption spectrum with a narrow emission line of 80 meV, and photoluminescence quantum yield of up to 40%. Optical anisotropy measurements on ensemble and single particle bases show the occurrence of polarized transitions directly mirroring the anisotropic wurtzite lattice, as also manifested from modeling of the quantum confined electronic levels. This shows a green synthesis path for achieving wurtzite InP nanocrystals with desired optoelectronic properties including color purity and light polarization with potential for diverse optoelectronic applications.

Engineering Transport Properties in Interconnected Enargite-Stannite Type Cu2+x Mn1-x GeS4 Nanocomposites.

Understanding the mechanisms that connect heat and electron transport with crystal structures and defect chemistry is fundamental to develop materials with thermoelectric properties. In this work, we synthesized a series of self-doped compounds Cu2+x Mn1-x GeS4 through Cu for Mn substitution. Using a combination of powder X-ray diffraction, high resolution transmission electron microscopy and precession-assisted electron diffraction tomography, we evidence that the materials are composed of interconnected enargite- and stannite-type structures, via the formation of nanodomains with a high density of coherent interfaces. By combining experiments with ab initio electron and phonon calculations, we discuss the structure-thermoelectric properties relationships and clarify the interesting crystal chemistry in this system. We demonstrate that excess Cu+ substituted for Mn2+ dopes holes into the top of the valence band, leading to a remarkable enhancement of the power factor and figure of merit ZT.

Formation of wurtzite sections in self-catalyzed GaP nanowires by droplet consumption.

Wurtzite GaP nanowires are interesting for the direct bandgap engineering and can be used as templates for further growth of hexagonal Si shells. Most wurtzite GaP nanowires have previously been obtained with Au catalysts. Here, we show that long (∼500 nm) wurtzite sections are formed in the top parts of self-catalyzed GaP nanowires grown by molecular beam epitaxy on Si(111) substrates in the droplet consumption stage, which is achieved by abruptly increasing the atomic V/III flux ratio from 2 to 3. We investigate the temperature dependence of the length of wurtzite sections and show that the longest sections are obtained at 610 °C. A supporting model explains the observed trends using a phase diagram of GaP nanowires, where the wurtzite phase is formed within a certain range of the droplet contact angles. The optimal growth temperature for growing wurtzite nanowires corresponds to the largest diffusion length of Ga adatoms, which helps to maintain the required contact angle for the longest time.

Two-dimensional ZnS@N-doped carbon nanoplates for complete lithium ion batteries.

Metal sulfides are promising anode materials for lithium ion batteries because of the high specific capacities and better electrochemical kinetics comparing to their oxide counterparts. In this paper, novel monocrystalline wurtzite ZnS@N-doped carbon (ZnS@N-C) nanoplates, whose morphology and phase are different from the common ZnS particles with cubic phase, are successfully synthesized. The ZnS@N-C nanoplates exhibit long cycle life with a high reversible specific capacity of 536.8 mAh · g-1after 500 cycles at a current density of 500 mA · g-1, which is superior to the pure ZnS nanoplates, illustrating the obvious effect of the N-doped carbon coating for mitigating volume change of the ZnS nanoplates and enhancing the electronic conductivity during charge/discharge processes. Furthermore, it is revealed that the ZnS single crystals with wurtzite phase in the ZnS@N-C nanoplates are transformed to the polycrystalline cubic phase ZnS after charge/discharge processes. In particular, the ZnS@N-C nanoplates are combined with the commercial LiNi0.6Co0.2Mn0.2O2cathode to fabricate a new type of LiNi0.6Co0.2Mn0.2O2/ZnS@N-C complete battery, which exhibits good cycling durability up to 120 cycles at a charge/discharge rate of 1 C after the prelithiation treatment on the ZnS@N-C anode, highlighting the potential of the ZnS@N-C nanoplates anode material applied in lithium ion battery.

Tolman's Electronic Parameter of the Ligand Predicts Phase in the Cation Exchange to CuFeS2Nanoparticles.

The metastable and thermodynamically favored phases of CuFeS2 are shown to be alternatively synthesized during partial cation exchange of hexagonal Cu2S using various phosphorus-containing ligands. Transmission electron microscopy and energy dispersive spectroscopy mapping confirm the retention of the particle morphology and the approximate CuFeS2 stoichiometry. Powder X-ray diffraction patterns and refinements indicate that the resulting phase mixtures of metastable wurtzite-like CuFeS2 versus tetragonal chalcopyrite are correlated with the Tolman electronic parameter of the tertiary phosphorus-based ligand used during the cation exchange. Strong L-type donors lead to the chalcopyrite phase and weak donors to the wurtzite-like phase. To our knowledge, this is the first demonstration of phase control in nanoparticle synthesis using solely L-type donors.

Exploring the Size Limitations of Wurtzite III-V Film Growth.

Metastable crystal phases of abundant semiconductors such as III-Vs, Si, or Ge comprise enormous potential to address current limitations in green light-emitting electrical diodes (LEDs) and group IV photonics. At the same time, these nonconventional polytypes benefit from the chemical similarity to their stable counterparts, which enables the reuse of established processing technology. One of the main challenges is the very limited availability and the small crystal sizes that have been obtained so far. In this work, we explore the limitations of wurtzite (WZ) film epitaxy on the example of InP. We develop a novel method to switch and maintain a metastable phase during a metal-organic vapor phase epitaxy process based on epitaxial lateral overgrowth and compare it with standard selective area epitaxy techniques. We achieve unprecedented large WZ layer dimensions exceeding 100 µm2 and prove their phase purity both by optical as well as structural characterization. On the basis of our observations, we further develop a nucleation-based model and argue on a fundamental size limitation of WZ film growth. Our findings may pave the way toward crystal phase engineered LEDs for highly efficient lighting and display applications.

Investigation of the Internal Structure of a Modern Seafloor Hydrothermal Chimney With a Combination of EBSD, EPMA, and XRD.

Samples from the sphalerite-dominated zone of a seafloor massive sulfide chimney, the Satanic Mills Chimney of the PACMANUS hydrothermal field, have been investigated to determine the internal macrostructure and microstructure of this zone, the phases present, and the distribution of metals. A combination of electron probe microanalysis, electron backscattered diffraction, and x-ray diffraction has been used. At the macroscale, this zone of the chimney wall is heavily porous and is comprised primarily of sphalerite, enclosing minor chalcopyrite, pyrite, and wurtzite. A Pb­As sulfosalt layer of possible microbial origins is present at the outer edge of the sphalerite matrix, next to a pore. The sphalerite has grown in globules on the order of 300 µm in diameter. At the microscale, the sphalerite features a colloform texture and a duplex-type grain structure consisting of either fine-grain regions in the center surrounded by coarse-grained regions or radiating coarse grains only. Pb- and As-rich bands have been detected in the colloform sphalerite, and growth twins have been observed in both the sphalerite and chalcopyrite crystals. A qualitative description of the growth of a typical globule is given, including nucleation, crystal growth, and solute redistribution.

Simulation of GaAs Nanowire Growth and Crystal Structure.

Growing GaAs nanowires with well-defined crystal structures is a challenging task, but may be required for the fabrication of future devices. In terms of crystal phase selection, the connection between theory and experiment is limited, leaving experimentalists with a trial and error approach to achieve the desired crystal structures. In this work, we present a modeling approach designed to provide the missing connection, combining classical nucleation theory, stochastic simulation, and mass transport through the seed particle. The main input parameters for the model are the flows of the growth species and the temperature of the process, giving the simulations the same flexibility as experimental growth. The output of the model can also be directly compared to experimental observables, such as crystal structure of each bilayer throughout the length of the nanowire and the composition of the seed particle. The model thus enables for observed experimental trends to be directly explored theoretically. Here, we use the model to simulate nanowire growth with varying As flows, and our results match experimental trends with a good agreement. By analyzing the data from our simulation, we find theoretical explanations for these experimental results, providing new insights into how the crystal structure is affected by the experimental parameters available for growth.

Measurements of Strain and Bandgap of Coherently Epitaxially Grown Wurtzite InAsP-InP Core-Shell Nanowires.

We report on experimental determination of the strain and bandgap of InAsP in epitaxially grown InAsP-InP core-shell nanowires. The core-shell nanowires are grown via metal-organic vapor phase epitaxy. The as-grown nanowires are characterized by transmission electron microscopy, X-ray diffraction, micro-photoluminescence (µPL) spectroscopy, and micro-Raman (µ-Raman) spectroscopy measurements. We observe that the core-shell nanowires are of wurtzite (WZ) crystal phase and are coherently strained with the core and the shell having the same number of atomic planes in each nanowire. We determine the predominantly uniaxial strains formed in the core-shell nanowires along the nanowire growth axis and demonstrate that the strains can be described using an analytical expression. The bandgap energies in the strained WZ InAsP core materials are extracted from the µPL measurements of individual core-shell nanowires. The coherently strained core-shell nanowires demonstrated in this work offer the potentials for use in constructing novel optoelectronic devices and for development of piezoelectric photovoltaic devices.

Simultaneous Growth of Pure Wurtzite and Zinc Blende Nanowires.

The opportunity to engineer III-V nanowires in wurtzite and zinc blende crystal structure allows for exploring properties not conventionally available in the bulk form as well as opening the opportunity for use of additional degrees of freedom in device fabrication. However, the fundamental understanding of the nature of polytypism in III-V nanowire growth is still lacking key ingredients to be able to connect the results of modeling and experiments. Here we show InP nanowires of both pure wurtzite and pure zinc blende grown simultaneously on the same InP [100]-oriented substrate. We find wurtzite nanowires to grow along [Formula: see text] and zinc blende counterparts along [Formula: see text]. Further, we discuss the nucleation, growth, and polytypism of our nanowires against the background of existing theory. Our results demonstrate, first, that the crystal growth conditions for wurtzite and zinc blende nanowire growth are not mutually exclusive and, second, that the interface energies predominantly determine the crystal structure of the nanowires.

Iuliacumite: A Novel Chemical Short-Range Order in a Two-Dimensional Wurtzite Single Monolayer InAs1-xSbx Shell on InAs Nanowires.

A chemical short-range order is found in single monolayer InAs1-xSbx shells, which inherit a wurtzite structure from the underlying InAs nanowire, instead of crystallizing in the energetically preferred zincblende structure. The chemical order is characterized by an anticorrelation ordering vector in the ⟨112̅0⟩ direction and arises from strong Sb-Sb repulsive interactions along the atomic chains in the ⟨112̅0⟩ direction.

Band Structure of Wurtzite GaBiAs Nanowires.

We report on the first successful growth of wurtzite (WZ) GaBiAs nanowires (NWs) and reveal the effects of Bi incorporation on the electronic band structure by using polarization-resolved optical spectroscopies performed on individual NWs. Experimental evidence of a decrease in the band-gap energy and an upward shift of the topmost three valence subbands upon the incorporation of Bi atoms is provided, whereas the symmetry and ordering of the valence band states remain unchanged, that is, Γ9, Γ7, and Γ7 within the current range of Bi compositions. The extraordinary valence band structure of WZ GaBiAs NWs is explained by anisotropic hybridization and anticrossing between p-like Bi states and the extended valence band states of host WZ GaAs. Moreover, the incorporation of Bi into GaAs is found to significantly reduce the temperature sensitivity of the band-gap energy in WZ GaBiAs NWs. Our work therefore demonstrates that utilizing dilute bismide alloys provides new avenues for band-gap engineering and thus photonic engineering with NWs.

A bulk adjusted linear combination of atomic orbitals (BA-LCAO) approach for nanoparticles.

We describe a bulk adjusted linear combination of atomic orbitals (BA-LCAO) approach for nanoparticles. In this method, we apply a many-body scaling function (in similar manner as in the environment-modified total energy based tight-binding method) to the DFT-derived diatomic AO interaction potentials (like in the conventional orbital-based density-functional tight binding approach) strictly according to atomic valences acquired naturally in a bulk structure. This modification, (a) facilitates all atom orbital-based electronic structure calculations of charge carrier dynamics in nanoscale structures with a molecular acceptor, and (b) allows to closely match high-level density functional calculation data (previously adjusted to the available experimental findings) for bulk structures. To advance practical application of the BA-LCAO approach we parameterize the Hamiltonian of wurtzite CdSe by fitting its band structure to a high-level DFT reference, corrected for experimentally measured band edges. Here, unlike in conventional DFTB approach, we: (1) use hydrogen-like AOs for the basis as exact atomic eigenfunctions, while orbital energies of which are taken from experimentally measured ionization potentials, and (2) parameterize the many-body scaling functions rather than the atomic wavefunctions. Development of this approach and parameters is guided by our goals to devise a method capable of simultaneously treating the problems of (i) interfacial electron/hole transfer between finite, variable size nanoparticles and electron scavenging molecules, and (ii) high-energy electronic transitions (Auger transitions) that mediate multi-exciton decay in quantum dots. Electronic structure results are described for CdSe quantum dots of various sizes. © 2018 Wiley Periodicals, Inc.

Concurrent Zinc-Blende and Wurtzite Film Formation by Selection of Confined Growth Planes.

Recent research on nanowires (NWs) demonstrated the ability of III-V semiconductors to adopt a different crystallographic phase when they are grown as nanostructures, giving rise to a novel class of materials with unique properties. Controlling the crystal structure however remains difficult and the geometrical constraints of NWs cause integration challenges for advanced devices. Here, we report for the first time on the phase-controlled growth of micron-sized planar InP films by selecting confined growth planes during template-assisted selective epitaxy. We demonstrate this by varying the orientation of predefined templates, which results in concurrent formation of zinc-blende (ZB) and wurtzite (WZ) material exhibiting phase purities of 100% and 97%, respectively. Optical characterization revealed a 70 meV higher band gap and a 2.5× lower lifetime for WZ InP in comparison to its natural ZB phase. Further, a model for the transition of the crystal structure is presented based on the observed growth facets and the bonding configuration of InP surfaces.

Distinct Excitonic Circular Dichroism between Wurtzite and Zincblende CdSe Nanoplatelets.

Nanocrystals (NCs) with identical components and sizes but different crystal structures could not be distinguished by conventional absorption and emission spectra. Herein, we find that circular dichroism (CD) spectroscopy can easily distinguish the CdSe nanoplatelets (NPLs) with different crystal structures of wurtzite (WZ) and zincblende (ZB) with the help of chiral l- or d-cysteine ligands. In particular, the CD signs of the first excitonic transitions in WZ and ZB NPLs capped by the same chiral cysteine are opposite. Theoretic calculation supports the viewpoint of different crystal structures and surfaces arrangements between WZ and ZB NPLs contributing to this significant phenomenon. The CD peaks appearing at the first excitonic transition band of WZ or ZB CdSe NPLs are clearly assigned to the different transition polarizations along 4p( x,y,z),Se → 5sCd or 4p( x,y),Se → 5sCd. This work not only provides a deep insight into the origin of the optical activity inside chiral semiconductor nanomaterials but also proposes the design principle of chiral semiconductor nanocrystals with high optic activity.

Atomistic Interface Dynamics in Sn-Catalyzed Growth of Wurtzite and Zinc-Blende ZnO Nanowires.

Unraveling the phase selection mechanisms of semiconductor nanowires (NWs) is critical for the applications in future advanced nanodevices. In this study, the atomistic vapor-solid-liquid growth processes of Sn-catalyzed wurtzite (WZ) and zinc blende (ZB) ZnO are directly revealed based on the in situ transmission electron microscopy. The growth kinetics of WZ and ZB crystal phases in ZnO appear markedly different in terms of the NW-droplet interface, whereas the nucleation site as determined by the contact angle ϕ between the seed particle and the NW is found to be crucial for tuning the NW structure through combined experimental and theoretical investigations. These results offer an atomic-scale view into the dynamic growth process of ZnO NW, which has implications for the phase-controllable synthesis of II-VI compounds and heterostructures with tunable band structures.