Mg Substitution Induced TM/Vacancy Disordering and Enhanced Structural Stability in Layered Oxide Cathode Materials.

Anionic redox is an effective way to increase the capacity of the cathode materials. Na2Mn3O7 [Na4/7[Mn6/7□1/7]O2, □ for the transition metal (TM) vacancies] with native and ordered TM vacancies can conduct a reversible oxygen redox and be a promising high-energy cathode material for sodium-ion batteries (SIBs). However, its phase transition at low potentials (∼1.5 V vs Na+/Na) induces potential decays. Herein, magnesium (Mg) is doped on the TM vacancies to form a disordered Mn/Mg/□ arrangement in the TM layer. The Mg substitution suppresses the oxygen oxidation at ∼4.2 V by reducing the number of the Na-O-□ configurations. Meanwhile, this flexible disordering structure inhibits the generation of the dissolvable Mn2+ ions and mitigates the phase transition at ∼1.6 V. Therefore, the Mg doping improves the structural stability and its cycling performance in 1.5-4.5 V. The disordering arrangement endows Na0.49Mn0.86Mg0.06□0.08O2 with a higher Na+ diffusivity and improved rate performance. Our study reveals that oxygen oxidation is highly dependent on the ordering/disordering arrangements in the cathode materials. This work provides insights into the balance of anionic and cationic redox for enhancing the structural stability and electrochemical performance in the SIBs.

Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode.

Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on the (100) GaAs substrates, the misorientation toward [01-1] direction, using the low-pressure metal organic chemical vapor deposition method. It is found that the optical properties of the layers are same as those of the disordered ones, essentially different from the ordered ones having two orientations towards [1-11] and [11-1] directions grown on (100) gallium arsenide substrates, which were previously reported. The bandgap at 300 K is 1.791 eV. The value is the smallest ever reported, to our knowledge. The high performance transverse stabilized AlGaInP laser diodes with strain compensated quantum well structure, which is developed in 1992, have been successfully obtained by controlling the misorientation angle and directions of GaAs substrates. The structure is applied to quantum dots laser diodes. This paper also describes the development history of the quantum well and the quantum dots laser diodes, and their future prospects.